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<p>In many industries, there is a growing demand for semiconductor pressure sensors capable of operating in harsh environments with extremely high and low temperatures and high vibrations. Utilizing the piezoresistive effect of heavily doped N-type 4H-SiC, we proposed a family design of eight pressure sensor chip structures featuring different diaphragm shapes of circles and squares, along with different piezoresistor configurations. The 4H-SiC piezoresistive pressure sensor was developed using micro-electromechanical systems (MEMS) technology and encapsulated in a leadless package structure via low-stress connection achieved by glass frit sintering. The 4H-SiC pressure sensor demonstrates impressive performance, exhibiting an accuracy of 0.18% FSO and a temperature tolerance range from −50 to 600 °C, with a temperature coefficient of zero output as low as 0.08%/°C at 600 °C. Furthermore, the developed sensor shows remarkable stability under conditions of high-temperature vibration coupling. The advancement of this family of 4H-SiC pressure sensors provides a promising solution for pressure measurement in harsh industrial environments.</p>

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Development of leadless packaged heavily doped N-type 4H-SiC pressure sensor family for harsh environments

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2025年4月28日

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  • Lukang Wang,
  • Nuo Wan,
  • Yu Yang,
  • Yabing Wang,
  • You Zhao,
  • Jiaoyang Zhu,
  • Minye Yang,
  • Yi Lyu,
  • Ming Liu,
  • Yulong Zhao

摘要

In many industries, there is a growing demand for semiconductor pressure sensors capable of operating in harsh environments with extremely high and low temperatures and high vibrations. Utilizing the piezoresistive effect of heavily doped N-type 4H-SiC, we proposed a family design of eight pressure sensor chip structures featuring different diaphragm shapes of circles and squares, along with different piezoresistor configurations. The 4H-SiC piezoresistive pressure sensor was developed using micro-electromechanical systems (MEMS) technology and encapsulated in a leadless package structure via low-stress connection achieved by glass frit sintering. The 4H-SiC pressure sensor demonstrates impressive performance, exhibiting an accuracy of 0.18% FSO and a temperature tolerance range from −50 to 600 °C, with a temperature coefficient of zero output as low as 0.08%/°C at 600 °C. Furthermore, the developed sensor shows remarkable stability under conditions of high-temperature vibration coupling. The advancement of this family of 4H-SiC pressure sensors provides a promising solution for pressure measurement in harsh industrial environments.