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<p>Weak polarization electric field (PEF) III-nitride LEDs provide a promising pathway toward high-performance micro-LEDs for next-generation displays and wearable devices. To realize this promise, improving the efficiency of weak-PEF LEDs is crucial, as it remains the central requirement for next-generation optoelectronic applications. Here, we demonstrate record-high efficiency weak-PEF LEDs on polar c-plane with InGaN/AlGaN digital alloy (DA) superlattice barriers, enabled by optimized pulse-growth mode of metal-organic chemical vapor deposition (MOCVD). In addition, we reveal strong lateral carrier confinement in these LEDs. We improve the structural quality and optical performance of weak-PEF InGaN/DA multiple quantum wells (MQWs) by optimizing the pulse-growth conditions. Further, we realize weak-PEF DA-based blue LEDs with peak external quantum efficiency up to 15%, which is the highest value in current studies of its kind. Importantly, weak-PEF DA-based LEDs have strong lateral carrier confinement, leading to less efficiency degradation from sidewall effects than conventional GaN-based MQWs LEDs. This work represents a meaningful step toward high-performance weak-PEF III-nitride LEDs, particularly for micro-LED applications where both efficiency and carrier confinement are critical.</p>

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Weak polarization electric field Ⅲ-N LEDs on polar plane with enhanced efficiency and strong lateral carrier confinement

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年7月1日

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  • Jingkai Zhao,
  • Changcai Zuo,
  • Lidong Zhang,
  • Haozhe Gao,
  • Yuliang Liu,
  • Gaoqiang Deng,
  • Xiaohang Li,
  • Yuantao Zhang

摘要

Weak polarization electric field (PEF) III-nitride LEDs provide a promising pathway toward high-performance micro-LEDs for next-generation displays and wearable devices. To realize this promise, improving the efficiency of weak-PEF LEDs is crucial, as it remains the central requirement for next-generation optoelectronic applications. Here, we demonstrate record-high efficiency weak-PEF LEDs on polar c-plane with InGaN/AlGaN digital alloy (DA) superlattice barriers, enabled by optimized pulse-growth mode of metal-organic chemical vapor deposition (MOCVD). In addition, we reveal strong lateral carrier confinement in these LEDs. We improve the structural quality and optical performance of weak-PEF InGaN/DA multiple quantum wells (MQWs) by optimizing the pulse-growth conditions. Further, we realize weak-PEF DA-based blue LEDs with peak external quantum efficiency up to 15%, which is the highest value in current studies of its kind. Importantly, weak-PEF DA-based LEDs have strong lateral carrier confinement, leading to less efficiency degradation from sidewall effects than conventional GaN-based MQWs LEDs. This work represents a meaningful step toward high-performance weak-PEF III-nitride LEDs, particularly for micro-LED applications where both efficiency and carrier confinement are critical.