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<p>Switchable phototransistors equipped with high-sensitivity, dynamic encryption, low-power consumption, and CMOS processing compatibility are key components for optoelectronic encryption chips. Two-dimensional van der Waals (vdWs) heterostructures provide a solution toward this goal, despite continued efforts, excessive dependence on gate voltage modulation, multi-wavelength excitation and polarization modulation causes unsolved issues of high-power operation, channel interference and limited integration level, respectively. Here, we demonstrate a dual-mode vdWs phototransistor based on PtTe<sub>2</sub>/WS<sub>2</sub> heterostructure. Through bias-modulated band alignment and carrier dynamics, the operation mechanism can be switched between photoconductive and photovoltaic modes. In photoconductive mode, the prolonged carrier lifetime donates a large photogain, yielding a high responsivity of 1.37 A W<sup>−1</sup>. In photovoltaic mode, a wide unilateral depletion region effectively suppresses the dark current, contributing outstanding specific detectivity of 9.42 × 10<sup>14</sup> Jones, weak light detection capability (~pW level), and high-speed response (rise time ~26.3 μs, fall time ~22.6 μs). More importantly, high on/off ratio of ~10<sup>5</sup> and four distinct current states have been achieved via dual-mode operation in the phototransistor, enabling the realization of multiple optical logic gates (XNOR, NOR and XOR) and multi-state quaternary image encryption with superior average correlation coefficient of adjacent pixels of 0.03. This reconfigurable device provides a versatile platform for constructing multi-functional photoelectronic chips and advancing secure optical communication technologies.</p>

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Dual-mode switchable and reconfigurable Van der Waals phototransistor for multi-state image encryption

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年7月1日

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  • Yuanfang Yu,
  • Senyao Tang,
  • Nanjie Jiang,
  • Yuwei Zhang,
  • Xiaorui Jin,
  • Jiaxin Gong,
  • Huijuan Zhao,
  • Anran Wang,
  • Dongyang Wan,
  • Zhenhua Ni,
  • Xinran Wang,
  • Li Gao

摘要

Switchable phototransistors equipped with high-sensitivity, dynamic encryption, low-power consumption, and CMOS processing compatibility are key components for optoelectronic encryption chips. Two-dimensional van der Waals (vdWs) heterostructures provide a solution toward this goal, despite continued efforts, excessive dependence on gate voltage modulation, multi-wavelength excitation and polarization modulation causes unsolved issues of high-power operation, channel interference and limited integration level, respectively. Here, we demonstrate a dual-mode vdWs phototransistor based on PtTe2/WS2 heterostructure. Through bias-modulated band alignment and carrier dynamics, the operation mechanism can be switched between photoconductive and photovoltaic modes. In photoconductive mode, the prolonged carrier lifetime donates a large photogain, yielding a high responsivity of 1.37 A W−1. In photovoltaic mode, a wide unilateral depletion region effectively suppresses the dark current, contributing outstanding specific detectivity of 9.42 × 1014 Jones, weak light detection capability (~pW level), and high-speed response (rise time ~26.3 μs, fall time ~22.6 μs). More importantly, high on/off ratio of ~105 and four distinct current states have been achieved via dual-mode operation in the phototransistor, enabling the realization of multiple optical logic gates (XNOR, NOR and XOR) and multi-state quaternary image encryption with superior average correlation coefficient of adjacent pixels of 0.03. This reconfigurable device provides a versatile platform for constructing multi-functional photoelectronic chips and advancing secure optical communication technologies.