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<p>Mid-infrared semiconductor lasers operating in the 2.0–5.0 μm spectral range play an important role for various applications, including trace-gas detection, biomedical analysis, and free-space optical communication. InP-based quantum-well (QW) and quantum-dash (Qdash) lasers are promising alternatives to conventional GaSb-based QW lasers because of their lower cost and mature fabrication infrastructure. However, they suffer from high threshold current density (<i>J</i><sub>th</sub>) and limited operation temperatures. InAs/InP quantum-dot (QD) lasers theoretically offer lower <i>J</i><sub>th</sub> owing to their three-dimensional carrier confinement. Nevertheless, achieving high-density, uniform InAs/InP QDs with sufficient gain for lasing over 2 μm remains a major challenge. Here, we report the first demonstration of mid-infrared InAs/InP QD lasers emitting beyond 2 μm. Five-stack InAs/In<sub>0.532</sub>Ga<sub>0.468</sub>As/InP QDs grown by molecular-beam epitaxy exhibit room-temperature photoluminescence at 2.04 μm. Edge-emitting lasers achieve lasing at 2.018 μm with a low <i>J</i><sub>th</sub> of 589 A cm<sup>−2</sup> and a maximum operation temperature of 50 °C. Notably, the <i>J</i><sub>th</sub> per layer (118 A cm<sup>−2</sup>) is the lowest ever reported for room-temperature InP-based mid-infrared lasers, outperforming QW/Qdash counterparts. These results pave the way for a new class of low-cost, high-performance mid-infrared light sources using InAs/InP QDs, marking a notable step forward in the development of mid-infrared semiconductor lasers.</p>

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Mid-infrared InAs/InP quantum-dot lasers

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年1月12日

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  • Yangqian Wang,
  • Hui Jia,
  • Jae-Seong Park,
  • Haotian Zeng,
  • Igor P. Marko,
  • Matthew Bentley,
  • Khalil El Hajraoui,
  • Shangfeng Liu,
  • Bo Yang,
  • Calum Dear,
  • Mengxun Bai,
  • Huiwen Deng,
  • Chong Chen,
  • Jiajing Yuan,
  • Jun Li,
  • Kongming Liu,
  • Dominic A. Duffy,
  • Zhao Yan,
  • Zihao Wang,
  • Stephen J. Sweeney,
  • Qiandong Zhuang,
  • Quentin M. Ramasse,
  • Siming Chen,
  • Mingchu Tang,
  • Qiang Li,
  • Alwyn Seeds,
  • Huiyun Liu

摘要

Mid-infrared semiconductor lasers operating in the 2.0–5.0 μm spectral range play an important role for various applications, including trace-gas detection, biomedical analysis, and free-space optical communication. InP-based quantum-well (QW) and quantum-dash (Qdash) lasers are promising alternatives to conventional GaSb-based QW lasers because of their lower cost and mature fabrication infrastructure. However, they suffer from high threshold current density (Jth) and limited operation temperatures. InAs/InP quantum-dot (QD) lasers theoretically offer lower Jth owing to their three-dimensional carrier confinement. Nevertheless, achieving high-density, uniform InAs/InP QDs with sufficient gain for lasing over 2 μm remains a major challenge. Here, we report the first demonstration of mid-infrared InAs/InP QD lasers emitting beyond 2 μm. Five-stack InAs/In0.532Ga0.468As/InP QDs grown by molecular-beam epitaxy exhibit room-temperature photoluminescence at 2.04 μm. Edge-emitting lasers achieve lasing at 2.018 μm with a low Jth of 589 A cm−2 and a maximum operation temperature of 50 °C. Notably, the Jth per layer (118 A cm−2) is the lowest ever reported for room-temperature InP-based mid-infrared lasers, outperforming QW/Qdash counterparts. These results pave the way for a new class of low-cost, high-performance mid-infrared light sources using InAs/InP QDs, marking a notable step forward in the development of mid-infrared semiconductor lasers.