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<p>Current crystalline thin-film production techniques typically require specific growth substrates, posing significant challenges for their use in flexible electronics and integrated optoelectronics. In response to these challenges, we introduce a novel method called ‘induced fit growth’, inspired by the induced fit theory in molecular biology. This method overcomes the limitations of current techniques by enabling the deposition of Ga-based semiconductor films, including GaSb, GaSe, GaAs, and GaAsSb, with controllable thickness and morphology on arbitrary substrates. Utilizing a low-cost, wafer-scale vapor deposition process compatible with standard semiconductor procedures, these Ga-based films can be patterned for various functional applications. For example, the patterned Ga-based thin films exhibit broad applicability in p-channel transistor arrays (with hole mobility of 0.25 cm<sup>2</sup> V⁻<sup>1</sup> s⁻<sup>1</sup>), functional synaptic devices, and flexible omnidirectional imaging sensors (maintaining functionality at incident angles as low as 5°). Overall, the proposed induced fit growth method facilitates the growth of Ga-based semiconductor films with greater integration flexibility, enhancing their advanced functionality and broad applicability.</p>

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Induced fit growth of Ga-based semiconductor thin films for brain-inspired electronics and optoelectronics

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2026年2月4日

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  • Zixu Sa,
  • Kepeng Song,
  • You Meng,
  • Wenfeng Wu,
  • Zhaocong Wang,
  • Pengsheng Li,
  • Jie Zhang,
  • Zeqi Zang,
  • Guangcan Wang,
  • Mingxu Wang,
  • Zhitai Jia,
  • Yang Tan,
  • Weifeng Li,
  • SenPo Yip,
  • Feng Chen,
  • Johnny C. Ho,
  • Zai-xing Yang

摘要

Current crystalline thin-film production techniques typically require specific growth substrates, posing significant challenges for their use in flexible electronics and integrated optoelectronics. In response to these challenges, we introduce a novel method called ‘induced fit growth’, inspired by the induced fit theory in molecular biology. This method overcomes the limitations of current techniques by enabling the deposition of Ga-based semiconductor films, including GaSb, GaSe, GaAs, and GaAsSb, with controllable thickness and morphology on arbitrary substrates. Utilizing a low-cost, wafer-scale vapor deposition process compatible with standard semiconductor procedures, these Ga-based films can be patterned for various functional applications. For example, the patterned Ga-based thin films exhibit broad applicability in p-channel transistor arrays (with hole mobility of 0.25 cm2 V⁻1 s⁻1), functional synaptic devices, and flexible omnidirectional imaging sensors (maintaining functionality at incident angles as low as 5°). Overall, the proposed induced fit growth method facilitates the growth of Ga-based semiconductor films with greater integration flexibility, enhancing their advanced functionality and broad applicability.