Scholarlink

<p>Integrated photonics has emerged as a promising alternative for data communication and computing, ferroelectric BaTiO<sub>3</sub> (BTO) stands out for its exceptional electro-optic response among candidate materials. However, direct epitaxial growth of BTO entails a fundamental trade-off: substrates with low refractive index are required for strong optical confinement, yet those with large lattice mismatch degrade film crystalline quality and electro-optic performance. We report a buffer-free, strain-engineered approach to integrate high-performance BTO thin films directly on LaAlO<sub>3</sub>-Sr<sub>2</sub>TaAlO<sub>6</sub> (LSAT) oxide-insulator substrates. By exploiting a self-buffer layer formed during the initial growth stage, we achieve periodic in-plane strain modulation that stabilizes a polymorphic phase boundary with orthorhombic polar nanoregions, yielding a Pockels coefficient exceeding 358 pm V⁻¹ and a Curie temperature raised to 200 °C. Leveraging this material platform, we demonstrate the first realization of a Mach–Zehnder modulator using epitaxial BTO on LSAT. The device exhibits a half-wave voltage–length product of 0.7 V cm at 1550 nm, which closely matches finite-element simulations, and supports a 6-dB electro-optic bandwidth of 28 GHz. Our results validate BTO on LSAT as a viable photonic platform for scalable, low-voltage and high-speed modulators.</p><p></p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Self-buffered epitaxy of barium titanate on oxide insulators enables high-performance electro-optic modulators

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2026年1月2日

查看全文
  • Chenguang Deng,
  • Yutong He,
  • Wenfeng Yang,
  • Han Yu,
  • Zijian Hong,
  • Hao Liu,
  • Haojie Han,
  • Wei Li,
  • Yunpeng Ma,
  • Zhongshan Zhang,
  • Yongjun Wu,
  • Jing Ma,
  • Bing Xiong,
  • Changzheng Sun,
  • Rong Yu,
  • Jing-Feng Li,
  • Ji Zhou,
  • Yi Luo,
  • Qian Li

摘要

Integrated photonics has emerged as a promising alternative for data communication and computing, ferroelectric BaTiO3 (BTO) stands out for its exceptional electro-optic response among candidate materials. However, direct epitaxial growth of BTO entails a fundamental trade-off: substrates with low refractive index are required for strong optical confinement, yet those with large lattice mismatch degrade film crystalline quality and electro-optic performance. We report a buffer-free, strain-engineered approach to integrate high-performance BTO thin films directly on LaAlO3-Sr2TaAlO6 (LSAT) oxide-insulator substrates. By exploiting a self-buffer layer formed during the initial growth stage, we achieve periodic in-plane strain modulation that stabilizes a polymorphic phase boundary with orthorhombic polar nanoregions, yielding a Pockels coefficient exceeding 358 pm V⁻¹ and a Curie temperature raised to 200 °C. Leveraging this material platform, we demonstrate the first realization of a Mach–Zehnder modulator using epitaxial BTO on LSAT. The device exhibits a half-wave voltage–length product of 0.7 V cm at 1550 nm, which closely matches finite-element simulations, and supports a 6-dB electro-optic bandwidth of 28 GHz. Our results validate BTO on LSAT as a viable photonic platform for scalable, low-voltage and high-speed modulators.