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<p>Phase transitions induce significant changes in the electrical and photonic properties of materials. Ultra-sensitive photodetectors leveraging material phase transitions can be realized near the transition temperature. Photodetectors based on Ta<sub>2</sub>NiSe<sub>5</sub>, a room-temperature excitonic insulator phase transition material, exhibit exceptional performance from visible to terahertz frequencies. Specifically, in the terahertz range, the electronic bandwidth is 360 kHz, and the specific detectivity (D*) reaches 5.3 × 10<sup>11</sup> cm·Hz<sup>1/2</sup>·W<sup>−1</sup>. The van der Waals heterostructure of Ta<sub>2</sub>NiSe<sub>5</sub>/WS<sub>2</sub> further enhances performance.</p>

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Excitonic insulator powers room-temperature ultra-sensitive visible to terahertz detection

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年4月2日

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  • Yi Wu,
  • Wenjie Deng,
  • Yongzhe Zhang

摘要

Phase transitions induce significant changes in the electrical and photonic properties of materials. Ultra-sensitive photodetectors leveraging material phase transitions can be realized near the transition temperature. Photodetectors based on Ta2NiSe5, a room-temperature excitonic insulator phase transition material, exhibit exceptional performance from visible to terahertz frequencies. Specifically, in the terahertz range, the electronic bandwidth is 360 kHz, and the specific detectivity (D*) reaches 5.3 × 1011 cm·Hz1/2·W−1. The van der Waals heterostructure of Ta2NiSe5/WS2 further enhances performance.