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<p>Optoelectronic memristors possess capabilities of data storage and mimicking human visual perception. They hold great promise in neuromorphic visual systems (NVs). This study introduces the amorphous wide-bandgap Ga<sub>2</sub>O<sub>3</sub> photoelectric synaptic memristor, which achieves 3-bit data storage through the adjustment of current compliance (<i>I</i><sub>cc</sub>) and the utilization of variable ultraviolet (UV-254 nm) light intensities. The “AND” and “OR” logic gates in memristor-aided logic (MAGIC) are implemented by utilizing voltage polarity and UV light as input signals. The device also exhibits highly stable synaptic characteristics such as paired-pulse facilitation (PPF), spike-intensity dependent plasticity (SIDP), spike-number dependent plasticity (SNDP), spike-time dependent plasticity (STDP), spike-frequency dependent plasticity (SFDP) and the learning experience behavior. Finally, when integrated into an artificial neural network (ANN), the Ag/Ga<sub>2</sub>O<sub>3</sub>/Pt memristive device mimicked optical pulse potentiation and electrical pulse depression with high pattern accuracy (90.7%). The single memristive cells with multifunctional features are promising candidates for optoelectronic memory storage, neuromorphic computing, and artificial visual perception applications.</p>

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Versatile optoelectronic memristor based on wide-bandgap Ga2O3 for artificial synapses and neuromorphic computing

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年4月15日

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  • Dongsheng Cui,
  • Mengjiao Pei,
  • Zhenhua Lin,
  • Hong Zhang,
  • Mengyang Kang,
  • Yifei Wang,
  • Xiangxiang Gao,
  • Jie Su,
  • Jinshui Miao,
  • Yun Li,
  • Jincheng Zhang,
  • Yue Hao,
  • Jingjing Chang

摘要

Optoelectronic memristors possess capabilities of data storage and mimicking human visual perception. They hold great promise in neuromorphic visual systems (NVs). This study introduces the amorphous wide-bandgap Ga2O3 photoelectric synaptic memristor, which achieves 3-bit data storage through the adjustment of current compliance (Icc) and the utilization of variable ultraviolet (UV-254 nm) light intensities. The “AND” and “OR” logic gates in memristor-aided logic (MAGIC) are implemented by utilizing voltage polarity and UV light as input signals. The device also exhibits highly stable synaptic characteristics such as paired-pulse facilitation (PPF), spike-intensity dependent plasticity (SIDP), spike-number dependent plasticity (SNDP), spike-time dependent plasticity (STDP), spike-frequency dependent plasticity (SFDP) and the learning experience behavior. Finally, when integrated into an artificial neural network (ANN), the Ag/Ga2O3/Pt memristive device mimicked optical pulse potentiation and electrical pulse depression with high pattern accuracy (90.7%). The single memristive cells with multifunctional features are promising candidates for optoelectronic memory storage, neuromorphic computing, and artificial visual perception applications.