<p>Silicon carbide (SiC) has emerged as a promising material for integrated photonic platforms. Over the past fifteen years, SiC-based functional devices have attracted widespread interest from researchers. A key factor is its compatibility with mature Complementary Metal–Oxide–Semiconductor fabrication technology, which offers significant competitive advantages. Additionally, favorable physical properties provide thermal, electrical, and radiation stability. Its outstanding optical characteristics, particularly extending into the nonlinear regime, effectively support the development of integrated photonic components. With its piezoelectric and electro-optic properties, SiC photonic integrated circuits enable hybrid integration with mechanical and electronic systems. Moreover, color centers in SiC, as defects, enable both single-photon emission and coherent spin-state control. Due to its defect configurations and various polytypes, SiC offers advantages over nitrogen-vacancy centers in diamond, making it increasingly attractive for quantum technology applications. In this review, the progress of SiC photonics over the past few decades is first discussed. Physical properties are summarized and presented, followed by a survey of research on functional devices including passive components, single-photon sources, photodetectors, and nonlinear optical generators. The fabrication methods and performance metrics are included for comparison. Finally, the outlook on SiC photonics research as well as the key challenges for future development is examined.</p>