Scholarlink

<p>This article reports the influence of substrate type and orientation on the photovoltaic and electrical performance of organic/inorganic hybrid devices. Polyaniline (PANI) was spin-coated at 2000&#xa0;rpm onto (111)B n-type GaAs, (100) n-Si, and (111) n-Si substrates to create hybrid solar cell devices. The current–voltage (I-V) characteristics under illuminated (60 mW/cm<sup>2</sup>) and dark conditions at room temperature were carried out to determine solar cell and diode parameters. In the presence of illumination, the current density–voltage (J-V) characteristics exhibited that the PANI/(111)B n-GaAs heterostructure was superior to the PANI/Si devices in terms of photovoltaic performance. The PANI/(111)B n-GaAs hybrid device has an open-circuit voltage (Voc) of 129&#xa0;mV, a short-circuit current density (J<sub>sc</sub>) of 10.8&#xa0;mA/cm<sup>2</sup>, and the highest conversion efficiency (<InlineEquation ID="IEq1"> <EquationSource Format="TEX">\(\eta\)</EquationSource> <EquationSource Format="MATHML"><math> <mi>η</mi> </math></EquationSource> </InlineEquation>) of 0.83 × 10<sup>–3</sup>%. On the other hand, dark current–voltage (I-V) measurements revealed that the PANI/(111) n-Si device has better diode parameters, such as a rectification ratio (R<sub>F</sub>) of 50.20, a high barrier height (<InlineEquation ID="IEq2"> <EquationSource Format="TEX">\({\upphi }_{\text{b}}\)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi mathvariant="normal">ϕ</mi> <mtext>b</mtext> </msub> </math></EquationSource> </InlineEquation>) of 0.69&#xa0;eV, and the lowest ideality factor (n) of 3.07. Interestingly, the results show that the GaAs-based device is better at solar cell performance, while the Si-based device, especially on the (111) plane, presents better electrical performance as a diode junction. This clearly confirms that the operational mechanisms of PANI-based hybrid solar cells are significantly affected by the semiconductor material substrate and crystallographic orientation-selection.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Effects of substrate type and orientation on the photovoltaic and diode performance of PANI-Based organic/inorganic hybrid devices

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2026年4月1日

查看全文
  • Hussein H. Tatar,
  • Dler A. Jameel

摘要

This article reports the influence of substrate type and orientation on the photovoltaic and electrical performance of organic/inorganic hybrid devices. Polyaniline (PANI) was spin-coated at 2000 rpm onto (111)B n-type GaAs, (100) n-Si, and (111) n-Si substrates to create hybrid solar cell devices. The current–voltage (I-V) characteristics under illuminated (60 mW/cm2) and dark conditions at room temperature were carried out to determine solar cell and diode parameters. In the presence of illumination, the current density–voltage (J-V) characteristics exhibited that the PANI/(111)B n-GaAs heterostructure was superior to the PANI/Si devices in terms of photovoltaic performance. The PANI/(111)B n-GaAs hybrid device has an open-circuit voltage (Voc) of 129 mV, a short-circuit current density (Jsc) of 10.8 mA/cm2, and the highest conversion efficiency ( \(\eta\) η ) of 0.83 × 10–3%. On the other hand, dark current–voltage (I-V) measurements revealed that the PANI/(111) n-Si device has better diode parameters, such as a rectification ratio (RF) of 50.20, a high barrier height ( \({\upphi }_{\text{b}}\) ϕ b ) of 0.69 eV, and the lowest ideality factor (n) of 3.07. Interestingly, the results show that the GaAs-based device is better at solar cell performance, while the Si-based device, especially on the (111) plane, presents better electrical performance as a diode junction. This clearly confirms that the operational mechanisms of PANI-based hybrid solar cells are significantly affected by the semiconductor material substrate and crystallographic orientation-selection.