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<p>We propose an amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT)-based active-matrix organic light-emitting diode (AMOLED) pixel circuit that provides highly stable driving current even in the pico-ampere-range current region. The proposed circuit minimizes the stored threshold voltage (<InlineEquation ID="IEq1"> <EquationSource Format="TEX">\(\mathrm {V_{TH}}\)</EquationSource> </InlineEquation>) loss caused by parasitic capacitors through the indirect connection of switching TFTs (SWTs) at the beginning of the emission stage, demonstrating high compensation accuracy for OLED current below 1nA. The measured results confirmed that the relative current error rate, calculated from the average current of five measured circuits, remained within a maximum of 14.99%. Therefore, the proposed circuit can generate a stable driving current in the pico-ampere-range current region, even under <InlineEquation ID="IEq2"> <EquationSource Format="TEX">\(\mathrm {V_{TH}}\)</EquationSource> </InlineEquation> variations in the driving TFT (DRT).</p>

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An a-IGZO TFT-based AMOLED pixel circuit for highly stable driving current under pico-ampere-range current region

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年2月27日

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  • Ji-Hwan Park,
  • Kyeong-Soo Kang,
  • Chanjin Park,
  • Key Young Yang,
  • Moonseok Jung,
  • Soo-Yeon Lee

摘要

We propose an amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT)-based active-matrix organic light-emitting diode (AMOLED) pixel circuit that provides highly stable driving current even in the pico-ampere-range current region. The proposed circuit minimizes the stored threshold voltage ( \(\mathrm {V_{TH}}\) ) loss caused by parasitic capacitors through the indirect connection of switching TFTs (SWTs) at the beginning of the emission stage, demonstrating high compensation accuracy for OLED current below 1nA. The measured results confirmed that the relative current error rate, calculated from the average current of five measured circuits, remained within a maximum of 14.99%. Therefore, the proposed circuit can generate a stable driving current in the pico-ampere-range current region, even under \(\mathrm {V_{TH}}\) variations in the driving TFT (DRT).