Selective hydrogen gas sensing using spincoated ZnO thin films
摘要
Metal oxide semiconductors (MOS), particularly zinc oxide (ZnO), have proven to be highly effective material for the detection of explosive, flammable, and toxic gases, leading to their widespread use in both domestic and industrial applications. This study employed a simple and cost-effective one-pot hydrothermal method to prepare ZnO nanostructures, which were then utilized to develop a ZnO thin-film gas sensing device using the spin-coating technique. X-ray diffraction (XRD) analysis confirmed a wurtzite hexagonal crystalline structure with a crystallite size of ~ 30 nm. Field-emission scanning electron microscopy (FE-SEM) coupled with energy-dispersive X-ray analysis (EDAX) revealed a flake-like surface morphology with near-stoichiometric elemental composition. The specific surface area (12.29 m2/g) and pore volume (0.13 cc/g) is determined using the Brunauer–Emmett–Teller (BET) analysis, X-ray photoelectron spectroscopy (XPS) provided detailed information on the oxidation states, surface defects, and chemical composition of the thin film. The fabricated ZnO thin-film sensor demonstrated good sensitivity with a response of 15% and 3% for hydrogen gas concentrations of 50 ppm and 5 ppm, respectively, at an operating temperature of 175 °C. The sensor exhibited rapid detection capabilities for hydrogen gas across a wide concentration range of 5–50 ppm, with response and recovery times of 55/25 s and 50/78 s, respectively. Moreover, the ZnO thin-film sensor displayed excellent selectivity for hydrogen compared to other gases such as carbon monoxide (CO), ammonia (NH3), and nitrogen dioxide (NO2). The ZnO-based sensor has potential applications in designing a low-cost and highly selective sensing system for hydrogen detection.