Design, simulation, and fabrication of power optimized MEMS multilayer semiconductor sensor for SO2 sensing
摘要
Amidst mounting global concerns regarding air pollution and its association with climate change, this study introduces a novel concept of multilayer semiconductor sensor chip. Fabricated on a silicon (Si) substrate, the chip incorporates sophisticated microheater elements made up of Platinum (Pt) separated by consecutive insulating layers and interdigitated electrodes coated with gold (Au) material for the gas-sensitive material as tin di oxide (SnO2). The design precision, validated through COMSOL Multiphysics simulations, ensured a secure operational temperature. Rigorous testing with gases such as SO2, NH3, CO, NO2 and H2S shows a remarkable achievement in improved cross sensitivity at low temperature, highlighting the innovation’s robustness. An important aspect of this research is the reduced operational temperature and low power consumption of the SO2 sensor. This technique of multilayer architecture, precise COMSOL simulation, and sputtering methodologies defines the uniqueness of this study. These developments not only enhanced the gas sensor efficiency but also present a promising solution to address the urgent challenges posed by air pollution, marking a significant step forwardness in environmental sensor technology.