Scholarlink

<p>Nanoscale etching is a key process in semiconductor manufacturing that directly affects pattern fidelity and process sustainability. In this work, high-aspect-ratio etching of SiO<sub>2</sub> was conducted using conventional CHF<sub>3</sub> and low global warming 1,1,1,2,3,3-hexafluoro propane (C<sub>3</sub>H<sub>2</sub>F<sub>6</sub>) at low-temperature. The C<sub>3</sub>H<sub>2</sub>F<sub>6</sub> exhibits a low global warming potential (GWP) of 1,500, compared to widely used CHF<sub>3</sub> having a GWP of 14,600. The SiO<sub>2</sub> etch rate and etch profiles were compared at chiller temperatures of 20 °C and −20 °C. The SiO<sub>2</sub> etch rate increased by 13% for the CHF<sub>3</sub> plasma and by 28% for the C<sub>3</sub>H<sub>2</sub>F<sub>6</sub> plasma compared to those at 20 °C when the chiller temperature was reduced to −20 °C. The etch profiles were evaluated for 180 nm SiO<sub>2</sub>/ACL hole patterns with an aspect ratio of 14:1. The C<sub>3</sub>H<sub>2</sub>F<sub>6</sub> plasma produced less bowing and tapering than the CHF<sub>3</sub> plasma due to the formation of a sidewall passivation layer by a higher concentration of polymeric radicals in the plasma. The concentrations of exhaust gases after plasma etching were examined by Fourier-transform infrared spectroscopy (FT-IR), and the CO<sub>2</sub> equivalent emissions for C<sub>3</sub>H<sub>2</sub>F<sub>6</sub> were reduced by 21% compared to those of CHF<sub>3</sub>. These results demonstrate that low-temperature processing using low-GWP C<sub>3</sub>H<sub>2</sub>F<sub>6</sub> enhances the SiO<sub>2</sub> etch rate while reducing the global warming impact relative to CHF<sub>3</sub>.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Low-temperature etching of SiO2 using low-global warming C3H2F6 plasma for nanoscale semiconductor device fabrication

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2026年6月15日

查看全文
  • Eunsu Lee,
  • Daeun Hong,
  • Yeonock Han,
  • Minsung Jeon,
  • Heeyeop Chae

摘要

Nanoscale etching is a key process in semiconductor manufacturing that directly affects pattern fidelity and process sustainability. In this work, high-aspect-ratio etching of SiO2 was conducted using conventional CHF3 and low global warming 1,1,1,2,3,3-hexafluoro propane (C3H2F6) at low-temperature. The C3H2F6 exhibits a low global warming potential (GWP) of 1,500, compared to widely used CHF3 having a GWP of 14,600. The SiO2 etch rate and etch profiles were compared at chiller temperatures of 20 °C and −20 °C. The SiO2 etch rate increased by 13% for the CHF3 plasma and by 28% for the C3H2F6 plasma compared to those at 20 °C when the chiller temperature was reduced to −20 °C. The etch profiles were evaluated for 180 nm SiO2/ACL hole patterns with an aspect ratio of 14:1. The C3H2F6 plasma produced less bowing and tapering than the CHF3 plasma due to the formation of a sidewall passivation layer by a higher concentration of polymeric radicals in the plasma. The concentrations of exhaust gases after plasma etching were examined by Fourier-transform infrared spectroscopy (FT-IR), and the CO2 equivalent emissions for C3H2F6 were reduced by 21% compared to those of CHF3. These results demonstrate that low-temperature processing using low-GWP C3H2F6 enhances the SiO2 etch rate while reducing the global warming impact relative to CHF3.