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<p>This study investigates the influence of deposition parameters specifically precursor concentration and annealing temperature on the optical and electrical properties of sol–gel spin-coated SnO<sub>2</sub> thin films. Films were fabricated from 5, 10, and 15 wt% SnO<sub>2</sub> aqueous colloidal dispersions deposited on Si(001) and glass substrates and annealed at room temperature, 100 and 150&#xa0;°C. Rutherford backscattering spectrometry (RBS) confirmed stoichiometric SnO<sub>2</sub> composition with film thicknesses ranging from 49&#xa0;nm to 90&#xa0;nm. Electrical characterization using the van der Pauw and Hall effect methods revealed that resistivity decreased from 203.6 µΩ cm to 179.8 µΩ cm as both precursor concentration and annealing temperature increased, primarily due to enhanced carrier concentration and reduced grain boundary scattering. Carrier concentration increased from (7.0 ± 0.4) × 10²⁰ cm⁻³ to (8.2 ± 0.3) × 10²⁰ cm⁻³, while mobility remained stable around 40–44&#xa0;cm² V⁻¹ s⁻¹. Optical transmittance exceeded 80% across the visible spectrum, and the optical bandgap decreased slightly from 3.78&#xa0;eV to 3.69&#xa0;eV with increasing precursor concentration. The findings demonstrate that controlled tuning of precursor concentration and annealing temperature can enhance the conductivity and optical transparency of SnO<sub>2</sub> films, making them promising electron transport layers for optoelectronic applications such as perovskite solar cells.</p>

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Effects of deposition parameters on optical and electrical properties of colloidal SnO2 film

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年4月7日

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  • Abubakar Sadiq Yusuf,
  • Sharifat Olalonpe Ibrahim,
  • Isah Kimpa Mohammed,
  • Umaru Ahmadu,
  • Kasim Uthman Isah

摘要

This study investigates the influence of deposition parameters specifically precursor concentration and annealing temperature on the optical and electrical properties of sol–gel spin-coated SnO2 thin films. Films were fabricated from 5, 10, and 15 wt% SnO2 aqueous colloidal dispersions deposited on Si(001) and glass substrates and annealed at room temperature, 100 and 150 °C. Rutherford backscattering spectrometry (RBS) confirmed stoichiometric SnO2 composition with film thicknesses ranging from 49 nm to 90 nm. Electrical characterization using the van der Pauw and Hall effect methods revealed that resistivity decreased from 203.6 µΩ cm to 179.8 µΩ cm as both precursor concentration and annealing temperature increased, primarily due to enhanced carrier concentration and reduced grain boundary scattering. Carrier concentration increased from (7.0 ± 0.4) × 10²⁰ cm⁻³ to (8.2 ± 0.3) × 10²⁰ cm⁻³, while mobility remained stable around 40–44 cm² V⁻¹ s⁻¹. Optical transmittance exceeded 80% across the visible spectrum, and the optical bandgap decreased slightly from 3.78 eV to 3.69 eV with increasing precursor concentration. The findings demonstrate that controlled tuning of precursor concentration and annealing temperature can enhance the conductivity and optical transparency of SnO2 films, making them promising electron transport layers for optoelectronic applications such as perovskite solar cells.