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<p>Recently, miniaturisation has encouraged the exploration of new materials and device architectures for enhanced performance of emerging semiconductor devices. Hence, in this work, we design an <i>Al</i><sub><i>x</i></sub><i>Ga</i><sub><i>1−x</i></sub><i>As</i> semi-cubic quantum well (SCQW) based HEMT structure and improve its multisubband electron mobility (<i>µ</i>) as a function of well width (<i>w</i><sub><i>w</i></sub>). It is observed that increasing <i>w</i><sub><i>w</i></sub> reduces ionised impurity (ii-) scattering, resulting in an enhancement in <i>µ</i>. In the absence of an applied electric field (<i>F</i>), the double subband is occupied. However, when <i>F</i> = 10&#xa0;kV/cm is applied, three subbands are occupied, resulting in a sudden drop in <i>µ</i>, primarily governed by ii-scattering, and marginally by alloy disorder (al-) scattering. Furthermore, <i>µ</i> increases with decreasing well potential height (<i>V</i><sub><i>sc</i></sub>) and increasing doping concentration (<i>n</i><sub><i>d</i></sub>). Also, we show that despite the same design parameters, the change in potential profile in semi-parabolic QW increases the al-scattering, which makes <i>µ</i> (SCQW) &gt;<i>µ</i> (SPQW). The above analysis will significantly contribute to the advancement of non-square quantum well-based HEMT devices for 5/6G applications.</p>

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Enhancement of multisubband electron mobility in AlxGa1−xAs Semi-Cubic quantum Well-based HEMT structure

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  • 发表日期：

    2025年9月26日

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  • Narayan Sahoo,
  • Ajit Kumar Sahu

摘要

Recently, miniaturisation has encouraged the exploration of new materials and device architectures for enhanced performance of emerging semiconductor devices. Hence, in this work, we design an AlxGa1−xAs semi-cubic quantum well (SCQW) based HEMT structure and improve its multisubband electron mobility (µ) as a function of well width (ww). It is observed that increasing ww reduces ionised impurity (ii-) scattering, resulting in an enhancement in µ. In the absence of an applied electric field (F), the double subband is occupied. However, when F = 10 kV/cm is applied, three subbands are occupied, resulting in a sudden drop in µ, primarily governed by ii-scattering, and marginally by alloy disorder (al-) scattering. Furthermore, µ increases with decreasing well potential height (Vsc) and increasing doping concentration (nd). Also, we show that despite the same design parameters, the change in potential profile in semi-parabolic QW increases the al-scattering, which makes µ (SCQW) >µ (SPQW). The above analysis will significantly contribute to the advancement of non-square quantum well-based HEMT devices for 5/6G applications.