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<p>In this study, we present a novel deformation-aware predictive modeling and design process for flexible electronic applications of strained-SiGe channel thin-film transistors using a 3D Technology CAD simulation framework. The mechanical deformation-aware design goes beyond traditional transistor design by considering the dynamic behavior of materials and structures under different bending circumstances. The predictive design method uses a simulation based on physics. We show how to deposit epitaxial layers of strained-SiGe films to fabricate thin-film transistors using the strain-modulation technology between Si and SiGe. We show the simulation results of the device’s evolution in stress and strain as a result of mechanical bending. More-than-Moore applications can make use of flexible SiGe thin-film transistors. The record cutoff frequency of 700&#xa0;MHz is also demonstrated by Si/SiGe-based devices without the need for aggressively scaled device dimensions.</p>

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Deformation-aware design of flexible strained-SiGe channel TFTs

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年6月4日

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  • C. K. Maiti,
  • Taraprasanna Dash

摘要

In this study, we present a novel deformation-aware predictive modeling and design process for flexible electronic applications of strained-SiGe channel thin-film transistors using a 3D Technology CAD simulation framework. The mechanical deformation-aware design goes beyond traditional transistor design by considering the dynamic behavior of materials and structures under different bending circumstances. The predictive design method uses a simulation based on physics. We show how to deposit epitaxial layers of strained-SiGe films to fabricate thin-film transistors using the strain-modulation technology between Si and SiGe. We show the simulation results of the device’s evolution in stress and strain as a result of mechanical bending. More-than-Moore applications can make use of flexible SiGe thin-film transistors. The record cutoff frequency of 700 MHz is also demonstrated by Si/SiGe-based devices without the need for aggressively scaled device dimensions.