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<p>This letter demonstrates an AlGaN/GaN high-electron-mobility transistors (HEMTs) incorporating a Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> (HZO)/Al<sub>2</sub>O<sub>3</sub> ferroelectric gate dielectric fabricated via electron-beam evaporation (E-beam) technique. Through precise control of HZO growth processes and post-annealing treatments, high-quality ferroelectric thin films were obtained, acting as the gate dielectric, enabling an ultra-high current on/off ratio of 10<sup>8</sup>, a low subthreshold slope (SS) of 64.4&#xa0;mV/dec, and a wide tuning range of the threshold voltage (<i>V</i><sub>TH</sub>). Our work indicates that ferroelectric polarization significantly influences electron transport behavior at the AlGaN/GaN interface, highlighting the potential of E-beam evaporated HZO thin film used in the application of next-generation power electronic systems.</p>

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Ferroelectric behavior of E-beam evaporated Hf0.5Zr0.5O2 thin film and integration with GaN HEMTs toward programmable current switching

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年12月29日

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  • Fang Ye,
  • Huaxin Shen,
  • Sitong Chen,
  • Tian Luo,
  • Fanping Meng,
  • Jie Lin,
  • Li Chen,
  • Zixian Jiang,
  • Xiaohang Li,
  • Jichun Ye,
  • Wei Guo

摘要

This letter demonstrates an AlGaN/GaN high-electron-mobility transistors (HEMTs) incorporating a Hf0.5Zr0.5O2 (HZO)/Al2O3 ferroelectric gate dielectric fabricated via electron-beam evaporation (E-beam) technique. Through precise control of HZO growth processes and post-annealing treatments, high-quality ferroelectric thin films were obtained, acting as the gate dielectric, enabling an ultra-high current on/off ratio of 108, a low subthreshold slope (SS) of 64.4 mV/dec, and a wide tuning range of the threshold voltage (VTH). Our work indicates that ferroelectric polarization significantly influences electron transport behavior at the AlGaN/GaN interface, highlighting the potential of E-beam evaporated HZO thin film used in the application of next-generation power electronic systems.