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<p>The layer of nanocrystalline iron disilicide (NC-FeSi<sub>2</sub>) films was successfully created on silicon (Si) wafers possessing (111) orientation by means of facing-target sputtering at room temperature. This layer of NC-FeSi<sub>2</sub> films was annealed at a fixed temperature of 300&#xa0;°C in air under different durations of two, four, and six hours. From the acquired results of XRD measurement, a wide diffraction peak was detected in the range of 40 to 50° for all conditions. By increasing the annealing duration, the intensity of this diffraction peak increased slightly while the width became slightly narrower. Based on the FESEM results, the unannealed NC-FeSi<sub>2</sub> film layer had a very smooth surface and consisted of numerous uniform nanocrystallites. After the annealing duration was increased to four and six hours, the uniform crystallites were rearranged into a better distributed array, resulting in additional defect reduction. The roughness of the unannealed NC-FeSi<sub>2</sub> thin film layer was 1.483&#xa0;nm. It gradually increased to 2.304&#xa0;nm under the annealing duration of six hours. The results of the contact angle measurement indicated enhanced hydrophobicity from 100.8° to 103.5°. The unannealed NC-FeSi<sub>2</sub> films exhibited a hardness of 11.06 GPa. As the annealing duration increased, the hardness barely increased to approximately 11.47 GPa. According to the experimental results, the variation in annealing duration slightly influenced the surface morphology, structure, wetting, and mechanical properties of the NC-FeSi<sub>2</sub> film layer.</p>

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Investigation of the annealing duration effect on the structural, morphological, wettability, and mechanical properties of nanocrystalline iron disilicide

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年7月3日

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  • Nattakorn Borwornpornmetee,
  • Thitirat Saenchantha,
  • Thanagorn Khuanpanya,
  • Boonchoat Paosawatyanyong,
  • Tsuyoshi Yoshitake,
  • Nathaporn Promros

摘要

The layer of nanocrystalline iron disilicide (NC-FeSi2) films was successfully created on silicon (Si) wafers possessing (111) orientation by means of facing-target sputtering at room temperature. This layer of NC-FeSi2 films was annealed at a fixed temperature of 300 °C in air under different durations of two, four, and six hours. From the acquired results of XRD measurement, a wide diffraction peak was detected in the range of 40 to 50° for all conditions. By increasing the annealing duration, the intensity of this diffraction peak increased slightly while the width became slightly narrower. Based on the FESEM results, the unannealed NC-FeSi2 film layer had a very smooth surface and consisted of numerous uniform nanocrystallites. After the annealing duration was increased to four and six hours, the uniform crystallites were rearranged into a better distributed array, resulting in additional defect reduction. The roughness of the unannealed NC-FeSi2 thin film layer was 1.483 nm. It gradually increased to 2.304 nm under the annealing duration of six hours. The results of the contact angle measurement indicated enhanced hydrophobicity from 100.8° to 103.5°. The unannealed NC-FeSi2 films exhibited a hardness of 11.06 GPa. As the annealing duration increased, the hardness barely increased to approximately 11.47 GPa. According to the experimental results, the variation in annealing duration slightly influenced the surface morphology, structure, wetting, and mechanical properties of the NC-FeSi2 film layer.