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<p>Graphene oxide (GO) and indium sulfide (In<sub>2</sub>S<sub>3</sub>) were combined to form pressed pellets. GO content in In<sub>2</sub>S<sub>3</sub> was taken with a ratio of 0, 5, 3 and 4% by weight. Samples were analyzed using X-ray diffraction (XRD), transmission electron microscopy (TEM) and impedance spectroscopy (IS). XRD results confirmed the polycrystalline nature and β-phase (tetragonal) structure with systematic shift toward lower angles and crystallite size about 30.47&#xa0;nm. TEM images revealed a uniform dispersion of GO within the In₂S₃ matrix, resulting in reduced particle size (≈ 150&#xa0;nm) and minimal agglomeration. The conductivity followed a thermally activated process, with an activation energy of 260 meV. Dielectric relaxation analysis using complex modulus revealed a distinct activation energy of 328 meV. This study indicates that the charge carrier in the sample governed both the electrical conduction and relaxation phenomena due to the activation energy and relaxation time values for both time and frequency ranges. Interestingly, the sample showed a transition from semiconductor to metal observed at high frequencies and increasing temperatures. These results suggest that GO-In₂S₃ composites can be engineered for use in advanced energy storage systems such as supercapacitors and batteries, or as buffer layers in environmentally friendly photovoltaic devices.</p>

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Assessment of the potential impact of graphene oxide on the properties and conduction mechanisms of indium(III) sulfide

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年4月29日

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  • A. Timoumi,
  • M. Saadi,
  • N. Bouguila,
  • Abdulrahman A. Alsimaree,
  • Y. Raviprakash,
  • Hatem M. Altass,
  • Ziad Moussa,
  • Rabab S. Jassas,
  • Alaa S. Abd-El-Aziz,
  • Saleh A. Ahmed

摘要

Graphene oxide (GO) and indium sulfide (In2S3) were combined to form pressed pellets. GO content in In2S3 was taken with a ratio of 0, 5, 3 and 4% by weight. Samples were analyzed using X-ray diffraction (XRD), transmission electron microscopy (TEM) and impedance spectroscopy (IS). XRD results confirmed the polycrystalline nature and β-phase (tetragonal) structure with systematic shift toward lower angles and crystallite size about 30.47 nm. TEM images revealed a uniform dispersion of GO within the In₂S₃ matrix, resulting in reduced particle size (≈ 150 nm) and minimal agglomeration. The conductivity followed a thermally activated process, with an activation energy of 260 meV. Dielectric relaxation analysis using complex modulus revealed a distinct activation energy of 328 meV. This study indicates that the charge carrier in the sample governed both the electrical conduction and relaxation phenomena due to the activation energy and relaxation time values for both time and frequency ranges. Interestingly, the sample showed a transition from semiconductor to metal observed at high frequencies and increasing temperatures. These results suggest that GO-In₂S₃ composites can be engineered for use in advanced energy storage systems such as supercapacitors and batteries, or as buffer layers in environmentally friendly photovoltaic devices.