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<p>Nanostructured Nickel Oxide (NiO) samples with particle sizes of 32–45&#xa0;nm were synthesized using a simple chemical method. X-ray diffraction analysis revealed the formation of NiO with a small amount of Ni<sub>2</sub>O<sub>3</sub>, which decreased with increasing annealing temperature. Williamson-Hall analysis showed that vacancies played a significant role in determining the microstrain of the samples. X-ray photoelectron spectroscopy was used to explore the elemental composition and oxygen vacancy states of the samples. The AC conductivity and dielectric behavior of the samples were studied over a temperature range of 313–423&#xa0;K and frequency interval of 100&#xa0;Hz to 1&#xa0;MHz using the correlated barrier hopping model. The results showed that the conductivity of the NiO samples was 3–6 orders of magnitude higher than that of NiO single crystals, and the activation energy decreased with increasing frequency and temperature due to the increased concentration of uncompensated Ni<sup>2+</sup> vacancies. The dielectric response indicated carrier-dominated dielectric behavior in NiO, characterized by a high concentration of hopping charge carriers. The defect-rich structure of nanostructured NiO with tunable properties makes it suitable for catalytic applications, energy storage and supercapacitors.</p> Graphical abstract <p></p>

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Temperature and defect-induced modulation of AC conductivity and dielectric behaviour in nickel oxide nanoparticles

  • 期刊论文

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  • 发表日期：

    2025年7月1日

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  • R. P. Neethu,
  • G. Madhu

摘要

Nanostructured Nickel Oxide (NiO) samples with particle sizes of 32–45 nm were synthesized using a simple chemical method. X-ray diffraction analysis revealed the formation of NiO with a small amount of Ni2O3, which decreased with increasing annealing temperature. Williamson-Hall analysis showed that vacancies played a significant role in determining the microstrain of the samples. X-ray photoelectron spectroscopy was used to explore the elemental composition and oxygen vacancy states of the samples. The AC conductivity and dielectric behavior of the samples were studied over a temperature range of 313–423 K and frequency interval of 100 Hz to 1 MHz using the correlated barrier hopping model. The results showed that the conductivity of the NiO samples was 3–6 orders of magnitude higher than that of NiO single crystals, and the activation energy decreased with increasing frequency and temperature due to the increased concentration of uncompensated Ni2+ vacancies. The dielectric response indicated carrier-dominated dielectric behavior in NiO, characterized by a high concentration of hopping charge carriers. The defect-rich structure of nanostructured NiO with tunable properties makes it suitable for catalytic applications, energy storage and supercapacitors.

Graphical abstract