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<p>Dysprosium-doped Zinc silicate nanophosphors, synthesized via co-precipitation, were studied for their properties under varying annealing temperatures. Increasing annealing temperature improved crystallinity in 0.5&#xa0;mol% Dy<sup>3+</sup>doped Zn<sub>2</sub>SiO<sub>4</sub>, affirming enhanced phase stability and structural integrity. UV–Vis spectroscopy highlighted an indirect bandgap of 5.76&#xa0;eV and 5.71&#xa0;eV for samples annealed at 600&#xa0;°C and 1100&#xa0;°C, respectively. Photoluminescence assessments, conducted at excitation and emission wavelengths of 350&#xa0;nm and 574&#xa0;nm, respectively, revealed broad excitation peaks due to multiple Stark level transitions between Dy<sup>3+</sup> ion levels. The dominant emission peak was identified at 392&#xa0;nm, corresponding to the 4H<sub>15/2</sub> → 6K<sub>17/2</sub> transitions in Dy<sup>3+</sup> ions. Additional emission transitions for Dy<sup>3+</sup> ions were observed at 470&#xa0;nm and between 484 and 494&#xa0;nm. The CIE coordinates indicate that the Zn<sub>2</sub>SiO<sub>4</sub> doped with 0.5&#xa0;mol% Dy<sup>3+</sup> predominantly emits in the white luminescence region. The high photoluminescence intensity, stability, and tunable emission properties of Zn₂SiO₄: Dy<sup>3</sup>⁺ making it a strong candidate for applications in white LEDs, display backlights, and optical sensors. </p>

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Optimizing annealing temperature for dysprosium-doped zinc silicate nanophosphors: unveiling structural advancements and luminescent characteristics for high-performance LED technology

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年10月21日

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  • K. Pratibha,
  • S. Shankar,
  • Ravi Kant Choubey,
  • S. Gaurav,
  • Y. Dwivedi,
  • Sunil Kumar,
  • Vijay Kumar,
  • Vishnu Kumawat

摘要

Dysprosium-doped Zinc silicate nanophosphors, synthesized via co-precipitation, were studied for their properties under varying annealing temperatures. Increasing annealing temperature improved crystallinity in 0.5 mol% Dy3+doped Zn2SiO4, affirming enhanced phase stability and structural integrity. UV–Vis spectroscopy highlighted an indirect bandgap of 5.76 eV and 5.71 eV for samples annealed at 600 °C and 1100 °C, respectively. Photoluminescence assessments, conducted at excitation and emission wavelengths of 350 nm and 574 nm, respectively, revealed broad excitation peaks due to multiple Stark level transitions between Dy3+ ion levels. The dominant emission peak was identified at 392 nm, corresponding to the 4H15/2 → 6K17/2 transitions in Dy3+ ions. Additional emission transitions for Dy3+ ions were observed at 470 nm and between 484 and 494 nm. The CIE coordinates indicate that the Zn2SiO4 doped with 0.5 mol% Dy3+ predominantly emits in the white luminescence region. The high photoluminescence intensity, stability, and tunable emission properties of Zn₂SiO₄: Dy3⁺ making it a strong candidate for applications in white LEDs, display backlights, and optical sensors.