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<p>The present work describes the electrochemical behaviour of an organometallic compound structured with amine group VI compound. The data obtained are analysed experimentally and compared along with the theoretical outcomes. The work explains the atomic lattice structure and electrochemical behaviour of the amine enforced group VI compound with capacitance, impedance, electrical conductivity (AC and DC) and modulus examination respectively. The plot of impedance curve with respect to high frequency brings out the electrical conductive properties and electrode polarization effect of the compound. The experimental result of dielectric measurements suggests that the title material could be used for storage applications since the values obtained are high. The conduction mechanism in the quantum scheme describes the localized or reorientation interaction processes taking place within the electronic structured material. A sigmoidal rise in the rate of modulus counters are associated with the conduction phenomena of charge carriers at short-range mobility within the influence of frequency.</p>

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Quantum emphasised electro-chemical influence on chromium based storage material for storage applications

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年4月9日

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  • V. Kayalvizhi,
  • K. Subhikssha,
  • Paavai Era,
  • A. Suvitha,
  • RO. MU. Jauhar,
  • V. Siva

摘要

The present work describes the electrochemical behaviour of an organometallic compound structured with amine group VI compound. The data obtained are analysed experimentally and compared along with the theoretical outcomes. The work explains the atomic lattice structure and electrochemical behaviour of the amine enforced group VI compound with capacitance, impedance, electrical conductivity (AC and DC) and modulus examination respectively. The plot of impedance curve with respect to high frequency brings out the electrical conductive properties and electrode polarization effect of the compound. The experimental result of dielectric measurements suggests that the title material could be used for storage applications since the values obtained are high. The conduction mechanism in the quantum scheme describes the localized or reorientation interaction processes taking place within the electronic structured material. A sigmoidal rise in the rate of modulus counters are associated with the conduction phenomena of charge carriers at short-range mobility within the influence of frequency.