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<p>Copper selenophosphate has emerged as a highly efficient and sustainable absorber material for thin‑film solar cells and photosensors. In this work, we numerically investigate the performance of a novel n-ZnSe/p-Cu<sub>3</sub>PSe<sub>4</sub>/p<sup>+</sup>-WSe<sub>2</sub> device structure using the SCAPS‑1D simulator. The design incorporates ZnSe as the window layer and WSe<sub>2</sub> as the back surface field layer, enabling improved carrier transport and enhanced optoelectronic response. A systematic optimization has been carried out by varying layer thicknesses, doping concentrations, and defect densities to achieve superior device characteristics. The optimized structure exhibits an open-circuit voltage of 1.19&#xa0;V, a short-circuit current density of 31.25&#xa0;mA/cm<sup>2</sup>, a fill factor of 81.58%, and a power conversion efficiency of 30.36%. As a photosensor, the device demonstrates excellent responsivity of 0.60&#xa0;A/W and detectivity of 1.68 × 10<sup>18</sup> Jones in the near‑infrared region. These outcomes highlight the potential of Cu<sub>3</sub>PSe<sub>4</sub>-based thin-film devices as promising candidates for next-generation photovoltaic and photonic applications.</p>

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Theoretical evaluation on the operation of the high-performance Cu3PSe4-based photonic devices for solar cell and photodetector applications

  • 期刊论文

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  • 发表日期：

    2026年3月15日

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  • Tanvir Ahmed,
  • Md. Alamin Hossain Pappu,
  • Md. Choyon Islam,
  • Jaker Hossain

摘要

Copper selenophosphate has emerged as a highly efficient and sustainable absorber material for thin‑film solar cells and photosensors. In this work, we numerically investigate the performance of a novel n-ZnSe/p-Cu3PSe4/p+-WSe2 device structure using the SCAPS‑1D simulator. The design incorporates ZnSe as the window layer and WSe2 as the back surface field layer, enabling improved carrier transport and enhanced optoelectronic response. A systematic optimization has been carried out by varying layer thicknesses, doping concentrations, and defect densities to achieve superior device characteristics. The optimized structure exhibits an open-circuit voltage of 1.19 V, a short-circuit current density of 31.25 mA/cm2, a fill factor of 81.58%, and a power conversion efficiency of 30.36%. As a photosensor, the device demonstrates excellent responsivity of 0.60 A/W and detectivity of 1.68 × 1018 Jones in the near‑infrared region. These outcomes highlight the potential of Cu3PSe4-based thin-film devices as promising candidates for next-generation photovoltaic and photonic applications.