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<p>In this paper, a detailed simulation study using Silvaco Atlas software is per formed on various double gate FinFET structures, where the various high-k dielectric materials and their comparative influence on energy band diagrams, electric potential distributions, I<sub>D</sub>-V<sub>GS</sub> characteristics, and electron concen tration are analysed. Various dielectric materials, SiO<sub>2</sub>, HfO<sub>2</sub>, Si<sub>3</sub>N<sub>4</sub>, and Al<sub>2</sub>O<sub>3</sub>, were explored. It was found that when using the HfO<sub>2</sub> dielectric material, all performance parameters were greatly enhanced as compared to the dielectrics studied. To be specific, results demonstrated improvement in overall device performance with better energy band diagram, better potential distribution, and better voltage-current characteristics with HfO<sub>2</sub> dielectric material, showing improvements in subthreshold values and characteristics, providing favorable insights into the application of HfO<sub>2</sub> for future research and development of double gate FinFETs and explore a favorable advancement in semiconductor design and fabrication. While the primary simulations were con ducted at 300&#xa0;K, additional analysis at elevated temperatures (350&#xa0;K and 400&#xa0;K) was performed to observe performance variation. The subthreshold slope is also determined for the different dielectric materials and was found to almost ideal value for HfO<sub>2</sub> dielectric material of 60.9&#xa0;mV/dec. An extremely high I<sub>on</sub>/I<sub>off</sub> is also obtained for HfO<sub>2</sub> dielectric material.</p>

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Dielectric engineering in 18 nm double gate FinFETs: comparative analysis of high-K materials for enhanced device performance

  • 期刊论文

  • 发表日期：

    2025年9月10日

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  • K. Sarangam,
  • Dharani Kumar Chowdary Mirappalli,
  • Aruru Sai Kumar,
  • Ch. Rama Prakasha Reddy

摘要

In this paper, a detailed simulation study using Silvaco Atlas software is per formed on various double gate FinFET structures, where the various high-k dielectric materials and their comparative influence on energy band diagrams, electric potential distributions, ID-VGS characteristics, and electron concen tration are analysed. Various dielectric materials, SiO2, HfO2, Si3N4, and Al2O3, were explored. It was found that when using the HfO2 dielectric material, all performance parameters were greatly enhanced as compared to the dielectrics studied. To be specific, results demonstrated improvement in overall device performance with better energy band diagram, better potential distribution, and better voltage-current characteristics with HfO2 dielectric material, showing improvements in subthreshold values and characteristics, providing favorable insights into the application of HfO2 for future research and development of double gate FinFETs and explore a favorable advancement in semiconductor design and fabrication. While the primary simulations were con ducted at 300 K, additional analysis at elevated temperatures (350 K and 400 K) was performed to observe performance variation. The subthreshold slope is also determined for the different dielectric materials and was found to almost ideal value for HfO2 dielectric material of 60.9 mV/dec. An extremely high Ion/Ioff is also obtained for HfO2 dielectric material.