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<p>Current mirror is the core structure for analog and mixed signal design circuits and determine the performance of analog structures, which largely depends on their characteristics. It is the unity gain current amplifier which provides output current proportional to input current at its high impedance output node. It also maintains constant current regardless of a load. A current mirror can be used as Direct Current (DC) current source, current amplifiers, active loads and biasing in most of analog and mixed signal circuits, such as operational amplifiers, operational trans-conductance amplifiers, and operational mirrored amplifier. Over the past two decades, the design of current mirror circuits faces several limitations. The limitations are, threshold voltage is varied from 50 to 100&#xa0;mV for wafer to wafer, Metal Oxide Semiconductor (MOS) transistors (μn and μp) are temperature dependent, current mirror circuits place the transistors in same length due to which transistor sizing roblem occurs. Important factors that influence performance of current mirror are: Accuracy, input resistance, output resistance and bandwidth.In this paper, 12 different types of current mirror circuits will be simulated by using Cadence-Virtuoso tool using CMOS 180&#xa0;nm technology. Current mirrors circuits are simulated in unique temperatures like 0&#xa0;°C (SS-Slow-Slow), 15&#xa0;°C (SF-Slow-Fast), 27&#xa0;°C (Normal Temperature), 55&#xa0;°C (FS-Fast-Slow), 65&#xa0;°C (FF-Fast–Fast). A comparative Process Voltage Temperature (PVT) analysis of various circuits can be investigated in terms of accuracy, input and output resistance and is suspected to perform better in terms of power consumption, output resistance.</p>

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A Review of PVT analysis of various CMOS current mirror configurations in 180 nm technology

  • 期刊论文

  • 发表日期：

    2025年8月1日

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  • Ramanjaneyulu Ningampalli,
  • Satyanarayana Donti,
  • R. S. Ernest Ravindran

摘要

Current mirror is the core structure for analog and mixed signal design circuits and determine the performance of analog structures, which largely depends on their characteristics. It is the unity gain current amplifier which provides output current proportional to input current at its high impedance output node. It also maintains constant current regardless of a load. A current mirror can be used as Direct Current (DC) current source, current amplifiers, active loads and biasing in most of analog and mixed signal circuits, such as operational amplifiers, operational trans-conductance amplifiers, and operational mirrored amplifier. Over the past two decades, the design of current mirror circuits faces several limitations. The limitations are, threshold voltage is varied from 50 to 100 mV for wafer to wafer, Metal Oxide Semiconductor (MOS) transistors (μn and μp) are temperature dependent, current mirror circuits place the transistors in same length due to which transistor sizing roblem occurs. Important factors that influence performance of current mirror are: Accuracy, input resistance, output resistance and bandwidth.In this paper, 12 different types of current mirror circuits will be simulated by using Cadence-Virtuoso tool using CMOS 180 nm technology. Current mirrors circuits are simulated in unique temperatures like 0 °C (SS-Slow-Slow), 15 °C (SF-Slow-Fast), 27 °C (Normal Temperature), 55 °C (FS-Fast-Slow), 65 °C (FF-Fast–Fast). A comparative Process Voltage Temperature (PVT) analysis of various circuits can be investigated in terms of accuracy, input and output resistance and is suspected to perform better in terms of power consumption, output resistance.