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<p>The reliability of silicon carbide lateral double-diffused metal-oxide-semiconductor (SiC LDMOS) devices in space is critically compromised by a single-event burnout (SEB), a failure mechanism primarily initiated by heavy-ion strikes. This paper presents a SEB-hardening structure that introduces a P+ poly-Si/N- SiC heterojunction and trench source design, providing a leakage path for radiation-induced carriers. This design effectively reduces the current density and avoids triggering the parasitic bipolar junction transistors (BJTs). Additionally, the incorporation of a buffer layer optimizes the electric field distribution, reduces impact ionization, and suppresses bipolar amplification, thereby preventing the self-sustaining feedback mechanism. Sentaurus TCAD simulation results demonstrate that, compared to the conventional SiC LDMOS, this hardened structure improves the SEB threshold voltage (<i>V</i><sub><i>SEB</i></sub>) by over 430%, while maintaining excellent basic electrical characteristics. This paper provides a new technological approach for the design and optimization of high-reliability radiation-hardened power devices.</p>

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High-reliability LDMOS with poly-Si/SiC heterojunction and buffer layer for enhanced single-event burnout tolerance

  • 期刊论文

  • 发表日期：

    2026年5月27日

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  • Tong Liu,
  • Liqun Wang,
  • Panpan Tang

摘要

The reliability of silicon carbide lateral double-diffused metal-oxide-semiconductor (SiC LDMOS) devices in space is critically compromised by a single-event burnout (SEB), a failure mechanism primarily initiated by heavy-ion strikes. This paper presents a SEB-hardening structure that introduces a P+ poly-Si/N- SiC heterojunction and trench source design, providing a leakage path for radiation-induced carriers. This design effectively reduces the current density and avoids triggering the parasitic bipolar junction transistors (BJTs). Additionally, the incorporation of a buffer layer optimizes the electric field distribution, reduces impact ionization, and suppresses bipolar amplification, thereby preventing the self-sustaining feedback mechanism. Sentaurus TCAD simulation results demonstrate that, compared to the conventional SiC LDMOS, this hardened structure improves the SEB threshold voltage (VSEB) by over 430%, while maintaining excellent basic electrical characteristics. This paper provides a new technological approach for the design and optimization of high-reliability radiation-hardened power devices.