<p>Third-generation wide bandgap semiconductors, represented by gallium nitride (GaN), make it possible to achieve high switching rates in the three-phase inverter circuits of servo drives. However, the extremely low turn-on threshold voltage of GaN may pose a risk of direct connection with the bridge arm due to the influence of parasitic parameters, threatening the reliable operation of the driver. Aiming at this problem, this paper analyzes the mechanism of the cross-talk of the bridge arm of the GaN-based three-phase inverter from the circuit structure of the three-phase inverter, establishes a GaN model of the non-active bridge arm with parasitic parameters, and obtains the expression of the gate-source voltage <i>V</i>_<i>gs</i> of the non-active bridge arm in the switching transient state. Based on this expression, a hierarchical cooperative suppression strategy is proposed and a hardware prototype platform is built to verify the feasibility of the hierarchical cooperative suppression strategy derived from the model. Experimental results show that the hierarchical cooperative suppression strategy can suppress the crosstalk voltage of the non-active bridge arm from 4.1&#xa0;V to below – 1&#xa0;V, and this strategy basically has no impact on the performance of the system. It is robust in the suppression effect of crosstalk voltage under different dead time periods. The strategy proposed in this paper ensures the reliable and stable operation of the inverter circuit of the servo driver. The established model also provides a theoretical analysis framework for the subsequent analysis and design of cross-interference suppression techniques in GaN half-bridge circuits, and offers a reference for the engineering application of third-generation wide bandgap semiconductors in servo systems.</p>