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<p>To achieve junction temperature (<i>T</i><sub>j</sub>) monitoring of the insulated-gate bipolar transistor (IGBT) modules in modular multilevel converters (MMCs), this paper proposes a novel non-invasive method based on the switching transient commutation effect within the half-bridge circuit of the IGBT module. Unlike conventional thermally sensitive electrical parameter (TSEP) methods, this technique utilizes the voltage overshoot across the parasitic inductance between the Kelvin emitter and the power emitter of complementary IGBTs, which is induced during the switching commutation of the controlled IGBTs. An analysis of the equivalent circuit model reveals a monotonic correlation between the extracted peak voltages and the IGBT <i>T</i><sub>j</sub>. Experimental validation on a double-pulse test platform demonstrates that while <i>V</i><sub>eE2,offM</sub> is susceptible to operating condition variations, <i>V</i><sub>eE2,onM</sub> is robust against load current (<i>I</i><sub>L</sub>) fluctuations. The proposed <i>V</i><sub>eE2,onM</sub>-based approach outperforms <i>V</i><sub>eE2,offM</sub> in both temperature sensitivity and operational robustness, offering an effective solution for the <i>T</i><sub>j</sub> monitoring of the IGBT modules in MMC applications.</p>

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Junction temperature evaluation method for IGBT modules based on half-bridge commutation effects

  • 期刊论文

  • 发表日期：

    2026年2月26日

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  • Mingxing Du,
  • Guosheng Hong,
  • Jianxiong Yang

摘要

To achieve junction temperature (Tj) monitoring of the insulated-gate bipolar transistor (IGBT) modules in modular multilevel converters (MMCs), this paper proposes a novel non-invasive method based on the switching transient commutation effect within the half-bridge circuit of the IGBT module. Unlike conventional thermally sensitive electrical parameter (TSEP) methods, this technique utilizes the voltage overshoot across the parasitic inductance between the Kelvin emitter and the power emitter of complementary IGBTs, which is induced during the switching commutation of the controlled IGBTs. An analysis of the equivalent circuit model reveals a monotonic correlation between the extracted peak voltages and the IGBT Tj. Experimental validation on a double-pulse test platform demonstrates that while VeE2,offM is susceptible to operating condition variations, VeE2,onM is robust against load current (IL) fluctuations. The proposed VeE2,onM-based approach outperforms VeE2,offM in both temperature sensitivity and operational robustness, offering an effective solution for the Tj monitoring of the IGBT modules in MMC applications.