GaN-MOSFET-based isolated bidirectional DC/DC converter for 7.2 kW EV charging applications with a 150–1000 V output range
摘要
This paper presents the design and implementation of a 7.2 kW isolated bidirectional DC/DC converter featuring gallium nitride (GaN)-based MOSFETs to achieve high efficiency and compact form factor for next-generation electric vehicle (EV) charging systems. The converter accommodates a wide output voltage range from 150 to 1000 V, making it suitable for high-voltage EV battery platforms. GaN-enabled high-frequency switching enhances power density and minimizes the magnetic footprint, whereas transformer-based galvanic isolation ensures operational safety. Bidirectional power flow supports charging and discharging operations, enabling vehicle-to-grid (V2G) and vehicle-to-home (V2H) capabilities. To mitigate switching losses, a soft-switching control strategy is implemented, maintaining high efficiency across a broad load range. Experimental results confirm stable operation, achieving peak efficiencies of 97.22% in charging mode and 96.96% in discharging mode. The proposed converter architecture offers a scalable and efficient solution for future-oriented bidirectional EV charging infrastructure.