<p>IGBT parallel connections are an effective way to increase the capacity of power electronic converters. The dynamic current balance (DCB) between parallel IGBTs is one of the key factors for the safe and stable operation of parallel IGBTs systems. Therefore, it is crucial to study the current difference between parallel IGBTs under various parameter mismatches to improve their stability. However, existing research mainly focus on the matching of driving parameters using the active driving method, the matching of a single device parameter, or the matching of a single circuit parasitic parameter. These studies do not consider the mixed matching analysis or matching strategy of device parameters and circuit parasitic parameters. Four parameters (emitter inductance, gate drive resistance, threshold voltage, and transconductance) significantly influence the DCB of parallel IGBTs. In the case of four parameter mismatch, there exists an equilibrium point that allows parallel IGBTs to achieve a better degree of current balance under the total influence of these mismatched parameters. Therefore, a current difference model (CDM) is created to calculate and analyze the equilibrium point for multiple parameter mismatches. Experimental results show that the multiparameter compensation scheme realized by the CDM can effectively reduce the current difference between parallel IGBTs, which provides a feasible reference for device selection and circuit design.</p>