<p>This study evaluated the migration of molten Si using one C-based and two SiC-based woven fabrics comprising different diameter fibers to join SiC through Si–C reaction bonding. First, the capillary heights for the three were compared by infiltrating molten Si at 1430℃. The C-based fabric exhibited the lowest infiltration efficiency owing to capillary blockage by the formation of reaction-bonded SiC. Subsequently, two 8 × 6.5&#xa0;cm SiC plates were joined at 1430℃ under a vacuum using the three fabrics and a joint filler tape with a SiC: C ratio of 70:30 wt%. The two SiC-based fabrics delivered sufficient quantities of molten Si to fully join the plates after 20&#xa0;min, whereas the C-based fabric required 1&#xa0;h to do so. The proposed method facilitates the practical joining of small SiC components that cannot be placed in direct contact with molten Si.</p>

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Capillary migration of molten Si through C and SiC fabrics to join SiC using Si–C reaction bonding

  • Ga-Eun Jin,
  • Sebin Park,
  • Sooyeon Joo,
  • Jong Seob Song,
  • Jung-Hye Eom,
  • Han Nam Cheong,
  • Dang-Hyok Yoon

摘要

This study evaluated the migration of molten Si using one C-based and two SiC-based woven fabrics comprising different diameter fibers to join SiC through Si–C reaction bonding. First, the capillary heights for the three were compared by infiltrating molten Si at 1430℃. The C-based fabric exhibited the lowest infiltration efficiency owing to capillary blockage by the formation of reaction-bonded SiC. Subsequently, two 8 × 6.5 cm SiC plates were joined at 1430℃ under a vacuum using the three fabrics and a joint filler tape with a SiC: C ratio of 70:30 wt%. The two SiC-based fabrics delivered sufficient quantities of molten Si to fully join the plates after 20 min, whereas the C-based fabric required 1 h to do so. The proposed method facilitates the practical joining of small SiC components that cannot be placed in direct contact with molten Si.