<p>α-Ga₂O₃, a metastable ultra-wide bandgap semiconductor, has attracted notable attention for high-power electronics and deep-ultraviolet applications due to its large bandgap and compatibility with sapphire substrates. Halide vapor phase epitaxy (HVPE) is a promising method for the scalable growth of α-Ga₂O₃, but ensuring high uniformity remains an important challenge, especially as wafer size increases to meet the demands of mass production. Herein, we employed computational fluid dynamics (CFD) and finite element method (FEM) to optimize the heteroepitaxial growth conditions of α-Ga₂O₃ with the goal of attaining high deposition uniformity. First, we conducted a parametric study to evaluate how four critical parameters—carrier gas flow rate, outer gas flow rate, growth temperature, and susceptor distance—affect uniformity. Gaussian process regression was then applied to identify the optimal set of process parameters for enhanced uniformity. The resulting simulation findings provide a theoretical framework for optimizing HVPE growth conditions for α-Ga₂O₃, facilitating the way for highly uniform deposition on increasingly larger substrates. </p>