Scholarlink

<p>The electroforming process of the memristor establishes the conduction path and initiates the resistive switching behavior in memristors. However, the conductive paths formed during the electroforming process are hard to control its size and dimension due to the stochastic growth and dissolution, making it challenging to regulate the resistance values and eventually degrading the switching uniformity and reliability. Moreover, in devices requiring electroforming, the initial operating power consumption increases as the array size increases. In this study, a device fabrication process was explored and optimized to annihilate the electroforming step in TiO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub> bilayer memristors. By compositional modulation of the switching layer and engineering of the oxide–electrode interface, quasi-electroforming-free switching was achieved, demonstrating a transition from abrupt to gradual resistive switching. The variability in pristine resistance and electroforming voltage was reduced by varying the oxide thickness and the post-annealing conditions. The fabricated devices also exhibited improved resistance modulation under compliance current control, improving the switching uniformity and reliability. Systematic electrical characterization was conducted and the measured electrical properties were analyzed to demonstrate the switching mechanism. This approach significantly improves resistance controllability and reduces switching variability, enabling stable low-power operation. The feasibility of implementation in neuromorphic hardware applications has been also confirmed.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Optimization of the fabrication process for TiOx/Al2O3 bilayer memristor to enhance the switching uniformity and reliability

  • 期刊论文

  • 发表日期：

    2025年3月14日

查看全文
  • Hae Jin Kim,
  • Seung Soo Kim,
  • So Jeong Park,
  • Yura Oh,
  • Sua Han

摘要

The electroforming process of the memristor establishes the conduction path and initiates the resistive switching behavior in memristors. However, the conductive paths formed during the electroforming process are hard to control its size and dimension due to the stochastic growth and dissolution, making it challenging to regulate the resistance values and eventually degrading the switching uniformity and reliability. Moreover, in devices requiring electroforming, the initial operating power consumption increases as the array size increases. In this study, a device fabrication process was explored and optimized to annihilate the electroforming step in TiOx/Al2O3 bilayer memristors. By compositional modulation of the switching layer and engineering of the oxide–electrode interface, quasi-electroforming-free switching was achieved, demonstrating a transition from abrupt to gradual resistive switching. The variability in pristine resistance and electroforming voltage was reduced by varying the oxide thickness and the post-annealing conditions. The fabricated devices also exhibited improved resistance modulation under compliance current control, improving the switching uniformity and reliability. Systematic electrical characterization was conducted and the measured electrical properties were analyzed to demonstrate the switching mechanism. This approach significantly improves resistance controllability and reduces switching variability, enabling stable low-power operation. The feasibility of implementation in neuromorphic hardware applications has been also confirmed.