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<p>This study explores extended gate junction-less TFETs (EG-JL-TFETs) for biosensing applications using both low-k SiO<sub>2</sub>and high-k HfO<sub>2</sub>dielectrics. The extended gate design enlarges the sensing area and enhances the gate to channel capacitance, leading to improved charge carrier injection and a more uniform electric field distribution Experimental results demonstrate the HfO<sub>2</sub>-based EG-JL-TFET exhibits a significantly higher Ion/Ioff ratio, reaching 1.77<InlineEquation ID="IEq1"> <EquationSource Format="TEX">\(\:\times\:{10}^{+09}A\)</EquationSource> </InlineEquation>, compared to the SiO<sub>2</sub>based design, which achieves an Ion/Ioff ratio of 4.04 × 10<sup>+07</sup><InlineEquation ID="IEq2"> <EquationSource Format="TEX">\(\:\:A\)</EquationSource> </InlineEquation>. In addition, the HfO<sub>2</sub>based N-type device shows a maximum on current of 2.7716<InlineEquation ID="IEq3"> <EquationSource Format="TEX">\(\:\times\:{10}^{-4}A\:\)</EquationSource> </InlineEquation>at a gate voltage of 5&#xa0;V, compared to 5.65838<InlineEquation ID="IEq4"> <EquationSource Format="TEX">\(\:{\:\times\:10}^{-6}A\)</EquationSource> </InlineEquation> for the SiO<sub>2</sub> based P-type device. Detailed analyses of surface potential and energy band profiles confirm that the extended gate structure significantly boosts device performance, making it highly sensitive to dielectric constant variations induced by biomolecule binding. These findings validate the critical role of high-k materials in advancing TFET performance and highlight the potential of this approach for developing next-generation compact biosensors for medical diagnostics and environmental monitoring.</p>

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Enhanced Junction-Less TFET with Extended Gate for Enhanced Biosensing Performance Within Tightened Physical Constraints

  • 期刊论文

  • 发表日期：

    2026年2月11日

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  • P. Karthikeyan,
  • R. Atchaya

摘要

This study explores extended gate junction-less TFETs (EG-JL-TFETs) for biosensing applications using both low-k SiO2and high-k HfO2dielectrics. The extended gate design enlarges the sensing area and enhances the gate to channel capacitance, leading to improved charge carrier injection and a more uniform electric field distribution Experimental results demonstrate the HfO2-based EG-JL-TFET exhibits a significantly higher Ion/Ioff ratio, reaching 1.77 \(\:\times\:{10}^{+09}A\) , compared to the SiO2based design, which achieves an Ion/Ioff ratio of 4.04 × 10+07 \(\:\:A\) . In addition, the HfO2based N-type device shows a maximum on current of 2.7716 \(\:\times\:{10}^{-4}A\:\) at a gate voltage of 5 V, compared to 5.65838 \(\:{\:\times\:10}^{-6}A\) for the SiO2 based P-type device. Detailed analyses of surface potential and energy band profiles confirm that the extended gate structure significantly boosts device performance, making it highly sensitive to dielectric constant variations induced by biomolecule binding. These findings validate the critical role of high-k materials in advancing TFET performance and highlight the potential of this approach for developing next-generation compact biosensors for medical diagnostics and environmental monitoring.