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<p>This research work addresses the critical need for advanced semiconductor devices in radio frequency (RF) applications by investigating Cylindrical Surrounding Double-Gate (CSDG) MOSFETs with La₂O₃ oxide. The work employs comprehensive modeling approaches, including Auger recombination, Band-To-Band Tunneling (BTBT), and energy transport models, analyze device performance. Key findings demonstrate a symmetric electron density distribution, peaking at the channel center with a gradual decline towards the edges, confirming superior electrostatic control. The CSDG MOSFET achieves exceptional performance metrics: subthreshold swing values of 20.0–23.5 mV/decade and an I<sub>ON</sub>/I<sub>OFF</sub> ratio of 1.89 × 10<sup>4</sup>, significantly outperforming conventional designs by 65% and 300% respectively. Energy-transmission analysis reveals an inverse exponential correlation T(E) = 0·85e<sup>-0·02E</sup>, with transmission coefficient decreasing from 0.8 at 10 eV to 0.05 at 200 eV. The novel La₂O₃/AlGaAs material system provides enhanced electrostatic control, reduced short-channel effects, and superior thermal management compared to SiO₂ and HfO₂ systems, making CSDG MOSFETs promising candidates for next-generation 5G/6G applications and low-power IoT devices.</p>

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Designing of Cylindrical Surrounding Double-Gate MOSFETs at Nanotechnology Scale from Double-Gate MOSFETs: Advancements of Silicon Semiconductor Devices

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年1月30日

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  • Naveenbalaji Gowthaman,
  • Viranjay M. Srivastava

摘要

This research work addresses the critical need for advanced semiconductor devices in radio frequency (RF) applications by investigating Cylindrical Surrounding Double-Gate (CSDG) MOSFETs with La₂O₃ oxide. The work employs comprehensive modeling approaches, including Auger recombination, Band-To-Band Tunneling (BTBT), and energy transport models, analyze device performance. Key findings demonstrate a symmetric electron density distribution, peaking at the channel center with a gradual decline towards the edges, confirming superior electrostatic control. The CSDG MOSFET achieves exceptional performance metrics: subthreshold swing values of 20.0–23.5 mV/decade and an ION/IOFF ratio of 1.89 × 104, significantly outperforming conventional designs by 65% and 300% respectively. Energy-transmission analysis reveals an inverse exponential correlation T(E) = 0·85e-0·02E, with transmission coefficient decreasing from 0.8 at 10 eV to 0.05 at 200 eV. The novel La₂O₃/AlGaAs material system provides enhanced electrostatic control, reduced short-channel effects, and superior thermal management compared to SiO₂ and HfO₂ systems, making CSDG MOSFETs promising candidates for next-generation 5G/6G applications and low-power IoT devices.