<p>For the development of high-performance thin-film transistors (TFTs), In₂O₃, which can be produced through a solution process and possesses exceptional electrical properties, is a key oxide semiconductor material. On the basis of aqueous solutions, In₂O₃ semiconductors can be manufactured in an environmentally benign manner, but they have disadvantages such as diminished electrical properties and decreased stability. This investigation investigated the effect of MoO₃ doping concentration on the electrical properties and stability of In₂O₃ TFT fabricated from aqueous solutions. By modifying the oxygen vacancy, the addition of MoO₃ to the In₂O₃ solution reduced defects within the semiconductor thin film and enhanced the stability of the oxide semiconductor. Observations of MoO₃ doping concentration condition (0 wt%, 3 wt%, 5 wt%, 7 wt%) in In₂O₃ TFT exhibited enhancements in <i>V</i>_<i>th</i>: 12.8&#xa0;V → 3.7&#xa0;V movement and on/off current ratio. Moreover, the results of positive bias stress and negative bias stress, which are evaluations of reliability, confirmed the effect of enhancing the electrical properties and stability of In₂O₃ TFT through MoO₃ doping by decreasing <i>V</i>_<i>th</i> as the doping concentration increases. To observe the change in In₂O₃ film by MoO₃ doping concentration, atomic force microscopy and contact angle measurements confirmed the gradual interface change, and X-ray photoelectron spectroscopy analysis confirmed the change in physical properties of In₂O₃ film due to MoO₃ doping. In addition, a Mo-In₂O₃ TFT-based resistance load inverter was evaluated, and its applicability as an active electronic device was confirmed by analyzing its inversion characteristics under different <i>V</i>_<i>DD</i> conditions.</p>