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<p>The bulky traditional low-frequency (LF) transformer can be replaced with a solid-state transformer (SST) thanks to high-speed switching power semiconductors such as silicon carbide FETs and diodes. The DAB implemented with SST can achieve high-frequency switching without increasing losses, thus minimizing the size and weight of the transformer. Therefore, the DAB converter topology can be widely used in industrial fields requiring bidirectional power transfer, such as in electric traction power systems. However, in general, for the DAB converter of the SST, to control the output voltage, the output voltage is sensed to synchronize the switching timing of the primary and secondary sides to control the output. Therefore, communication between the primary and secondary sides is necessary, which results in the problem of requiring a high isolation voltage. This paper proposes a new scheme based on the DPS modulation method to address the issue of requiring a high isolation voltage and verifies through simulation that the output is accurately controlled across the full range of input.</p>

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New Secondary-Side Control Scheme of Absolutely Isolated Dual-Active-Bridge (DAB) Converter for Solid-State-Transformer (SST)

  • 期刊论文

  • 发表日期：

    2025年6月17日

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  • Da-Un Kim,
  • Chong-Eun Kim

摘要

The bulky traditional low-frequency (LF) transformer can be replaced with a solid-state transformer (SST) thanks to high-speed switching power semiconductors such as silicon carbide FETs and diodes. The DAB implemented with SST can achieve high-frequency switching without increasing losses, thus minimizing the size and weight of the transformer. Therefore, the DAB converter topology can be widely used in industrial fields requiring bidirectional power transfer, such as in electric traction power systems. However, in general, for the DAB converter of the SST, to control the output voltage, the output voltage is sensed to synchronize the switching timing of the primary and secondary sides to control the output. Therefore, communication between the primary and secondary sides is necessary, which results in the problem of requiring a high isolation voltage. This paper proposes a new scheme based on the DPS modulation method to address the issue of requiring a high isolation voltage and verifies through simulation that the output is accurately controlled across the full range of input.