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<p>In this paper, indium oxide (In<sub>2</sub>O<sub>3</sub>) thin film transistors (TFTs) with alumina matrix/self-assembled film fluoride (AlO<sub>x</sub>/SAF-F) gate dielectric layer had been subjected to sol-gel treatment. With reduced leakage current of the device, i.e., saturation mobility increases from 0.32 ± 0.05 to 0.57 ± 0.03 cm<sup>2</sup>V<sup>− 1</sup>s<sup>− 1</sup>, and the on/off current ratio increases from 1.92 × 10<sup>3</sup> increased by 2.75 × 10<sup>4</sup>. The threshold voltage increases from 0.29 ± 0.05 to 0.31 ± 0.04&#xa0;V, the subthreshold swing value decreases from 0.35 ± 0.07 by 0.13 ± 0.04&#xa0;V/dec. Compared with AlO<sub>x</sub> single gate dielectric layer, using AlO<sub>x</sub>/SAF-F improves the stability of In<sub>2</sub>O<sub>3</sub> TFT while showing higher stability under negative bias stress.</p>

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Sol-gel Processed In2O3 TFT with Hybrid Inorganic/Organic Dielectric Layers for Low-Voltage Driving

  • 期刊论文

  • 发表日期：

    2025年3月21日

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  • Shi-Kai Shi,
  • Han-Lin Zhao,
  • Xiao-Lin Wang,
  • Soochang You,
  • Sung-Jin Kim

摘要

In this paper, indium oxide (In2O3) thin film transistors (TFTs) with alumina matrix/self-assembled film fluoride (AlOx/SAF-F) gate dielectric layer had been subjected to sol-gel treatment. With reduced leakage current of the device, i.e., saturation mobility increases from 0.32 ± 0.05 to 0.57 ± 0.03 cm2V− 1s− 1, and the on/off current ratio increases from 1.92 × 103 increased by 2.75 × 104. The threshold voltage increases from 0.29 ± 0.05 to 0.31 ± 0.04 V, the subthreshold swing value decreases from 0.35 ± 0.07 by 0.13 ± 0.04 V/dec. Compared with AlOx single gate dielectric layer, using AlOx/SAF-F improves the stability of In2O3 TFT while showing higher stability under negative bias stress.