<p>Power semiconductor devices, especially insulated gate bipolar transistors (IGBTs), play a vital role in high-power applications, including electric vehicles and renewable energy systems. In this study, we developed a benchmarking model based on finite element analysis (FEA) for eight different IGBT devices, utilizing experimental data to enhance our understanding of their performance. We measured electrical characteristics and temperature distributions under two current conditions (1A and 3A) and calibrated these measurements with our FEA model. Using the established benchmarking model, we explored the thermal and electrical characteristics of the devices, paying particular attention to how factors such as wire diameter and die tilt affect their performance and temperature distribution. Through the application of design of experiments, we investigated the relationships between these parameters and the performance metrics of the IGBT devices. Our findings highlight significant correlations, providing valuable insights for improving the reliability of IGBTs. The FEA-based benchmarking model and the analytical approach we present can serve as effective tools for optimizing design and enhancing device reliability, ultimately helping to reduce both development time and costs.</p>