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<p>This paper presents the development of an automated system for precise measurement of sheet resistance in conductive thin-film materials, including ITO, carbon nanotubes, graphene, and silicon wafers. The system integrates a sheet resistance meter utilizing the four-point probe (FPP) method in both single and dual configuration modes. Key components include a motorized probe station for vertical movement of the FPP, a C# software interface enabling automated measurement, and a temperature chamber for controlled testing environments. Additionally, a custom-designed wafer thickness gauge and a thermometer for chamber temperature monitoring were implemented. The sheet resistance meter achieved measurement ranges of 4.532 mΩ/□ to 45.32 MΩ/□ in single configuration, and 2.605 mΩ/□ to 26.05 MΩ/□ in dual configuration. The instrument supported measurement of resistance, sheet resistance, and specific resistance, demonstrating high repeatability and reproducibility with less than 0.1% full-scale error in resistance measurements.</p>

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Development of an Automatic Precision Sheet Resistance Measurement System Using the Four-Point Probe Method

  • 期刊论文

  • 发表日期：

    2025年3月10日

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  • Jeon-Hong Kang,
  • Sang Hwa Lee,
  • Kwang Min Yu,
  • Sungjung Joo

摘要

This paper presents the development of an automated system for precise measurement of sheet resistance in conductive thin-film materials, including ITO, carbon nanotubes, graphene, and silicon wafers. The system integrates a sheet resistance meter utilizing the four-point probe (FPP) method in both single and dual configuration modes. Key components include a motorized probe station for vertical movement of the FPP, a C# software interface enabling automated measurement, and a temperature chamber for controlled testing environments. Additionally, a custom-designed wafer thickness gauge and a thermometer for chamber temperature monitoring were implemented. The sheet resistance meter achieved measurement ranges of 4.532 mΩ/□ to 45.32 MΩ/□ in single configuration, and 2.605 mΩ/□ to 26.05 MΩ/□ in dual configuration. The instrument supported measurement of resistance, sheet resistance, and specific resistance, demonstrating high repeatability and reproducibility with less than 0.1% full-scale error in resistance measurements.