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<p>Plasmonic W<sub>18</sub>O<sub>49</sub> has emerged as a highly promising broadband photodetection candidate, due to its excellent ultraviolet-to-near-infrared spectral response. However, the abundant trap states and inferior carrier transport properties pose significant challenges to the fabrication of high-performance photodetectors. Herein, we demonstrate an interface engineering strategy by using conductive MXene (Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub>) as an interfacial electron transport layer to address these critical limitations. The Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub> interfacial layer serves as a rapid electron transport channel, efficiently extracting photogenerated electrons from W<sub>18</sub>O<sub>49</sub> and suppressing carrier recombination at defect states on the surface. By tuning Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub> colloidal precursor dosage to modulate the layer thickness, the optimized Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub>/W<sub>18</sub>O<sub>49</sub> photodetector exhibits 11.5-fold and 4.7-fold higher responsivity at 365&#xa0;nm (371.88&#xa0;mA/W) and 850&#xa0;nm (116.57&#xa0;mA/W), respectively, compared to the pure W<sub>18</sub>O<sub>49</sub> device. Additionally, under a bias voltage of 2&#xa0;V, this photodetector demonstrates remarkable responsivity (371.88, 152.32, 92.39, 83.11 and 116.57&#xa0;mA/W) and high specific detectivity (1.16 × 10<sup>11</sup>, 4.14 × 10<sup>10</sup>, 2.47 × 10<sup>10</sup>, 2.44 × 10<sup>10</sup> and 3.25 × 10<sup>10</sup> Jones) when irradiated at different wavelengths (365, 450, 660, 730 and 850&#xa0;nm). This work provides an effective interface modification strategy for plasmonic W<sub>18</sub>O<sub>49</sub>-based broadband photodetectors and a general design paradigm for other metal oxide photoelectric devices.</p>

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Enhanced broadband photodetection over plasmonic W18O49 with a Ti3C2Tx MXene electron transport layer

  • 期刊论文

  • 发表日期：

    2026年3月16日

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  • Yongan Zhu,
  • Xin Gao,
  • Shiwen Du,
  • Na Lu,
  • Xuedong Jing,
  • Wei Lu,
  • Xiaoyi Jiang,
  • Zhenyi Zhang

摘要

Plasmonic W18O49 has emerged as a highly promising broadband photodetection candidate, due to its excellent ultraviolet-to-near-infrared spectral response. However, the abundant trap states and inferior carrier transport properties pose significant challenges to the fabrication of high-performance photodetectors. Herein, we demonstrate an interface engineering strategy by using conductive MXene (Ti3C2Tx) as an interfacial electron transport layer to address these critical limitations. The Ti3C2Tx interfacial layer serves as a rapid electron transport channel, efficiently extracting photogenerated electrons from W18O49 and suppressing carrier recombination at defect states on the surface. By tuning Ti3C2Tx colloidal precursor dosage to modulate the layer thickness, the optimized Ti3C2Tx/W18O49 photodetector exhibits 11.5-fold and 4.7-fold higher responsivity at 365 nm (371.88 mA/W) and 850 nm (116.57 mA/W), respectively, compared to the pure W18O49 device. Additionally, under a bias voltage of 2 V, this photodetector demonstrates remarkable responsivity (371.88, 152.32, 92.39, 83.11 and 116.57 mA/W) and high specific detectivity (1.16 × 1011, 4.14 × 1010, 2.47 × 1010, 2.44 × 1010 and 3.25 × 1010 Jones) when irradiated at different wavelengths (365, 450, 660, 730 and 850 nm). This work provides an effective interface modification strategy for plasmonic W18O49-based broadband photodetectors and a general design paradigm for other metal oxide photoelectric devices.