Scholarlink

<p>Insulated gate bipolar transistor (IGBT) is a kind of power switching device owns the advantage of gate voltage control and high power capacity, while remaining the problem of potential catastrophic failures in high voltage. A novel structure of IGBT combined with a vacuum field emission transistor (VFET) and a bipolar junction transistor (BJT) was introduced which exhibits high blocking voltage, high frequency characteristics and excellent robustness toward catastrophic failure such as latch-up and gate oxide breakdown. A pulsing current overshooting effect due to the gate-cathode capacitance of VFET was observed to expedite the switching process, offering a novel approach to shorten the switching time of IGBT. Benefit from this, the field emission IGBT (FE-IGBT) was capable of operating over a broad frequency range from DC to 100&#xa0;kHz. The static and dynamic characteristics of the device were reported, including a blocking voltage of 800&#xa0;V, a maximum output current of 0.5&#xa0;A. This work presented a new route to bloom the performance of IGBT and also created a feasibility to connect vacuum electronics device with solid-state semiconductor devices.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

A high frequency insulated gate bipolar transistor (IGBT) structure using carbon nanotube vacuum field emission transistor

  • 期刊论文

  • 发表日期：

    2026年1月26日

查看全文
  • Yulong Ding,
  • Jun Jiang,
  • Junzhong Liang,
  • Xiaoyu Qin,
  • Yanlin Ke,
  • Juncong She,
  • Yu Zhang,
  • Shaozhi Deng

摘要

Insulated gate bipolar transistor (IGBT) is a kind of power switching device owns the advantage of gate voltage control and high power capacity, while remaining the problem of potential catastrophic failures in high voltage. A novel structure of IGBT combined with a vacuum field emission transistor (VFET) and a bipolar junction transistor (BJT) was introduced which exhibits high blocking voltage, high frequency characteristics and excellent robustness toward catastrophic failure such as latch-up and gate oxide breakdown. A pulsing current overshooting effect due to the gate-cathode capacitance of VFET was observed to expedite the switching process, offering a novel approach to shorten the switching time of IGBT. Benefit from this, the field emission IGBT (FE-IGBT) was capable of operating over a broad frequency range from DC to 100 kHz. The static and dynamic characteristics of the device were reported, including a blocking voltage of 800 V, a maximum output current of 0.5 A. This work presented a new route to bloom the performance of IGBT and also created a feasibility to connect vacuum electronics device with solid-state semiconductor devices.