Scholarlink

<p>Doping diamond exhibits excellent photoelectric properties, making it promising for applications in wide-bandgap semiconductors, high-temperature devices, and high-power electronics. However, research on n-type doping remains limited. This paper reviews the main n-type doping methods for diamond: ion implantation (I/I), chemical vapor deposition (CVD), high pressure–high temperature (HPHT), deuterated method (DM), surface charge transfer doping (SCTD), and laser irradiation (LI). It analyzes the parameters, advantages, and disadvantages of each technique while classifying common single-element and multi-element co-doping methods. Single-element dopants include Group IA (Li, Na, K), Group ⅡA (Be, Mg), Group VA (N, P, As, Sb), and Group ⅥA (O, S, Se, Te) elements. Multi-element co-doping often combines B-P, B-S, B-O, and B-N pairs. Additionally, we examine the atomic structures of these dopants, introduce commonly used simulation models, and compare the electronic characteristics of synthesized n-type doping diamonds. Finally, we summarize the challenges of n-type doping diamond in doping equipment, processes, and electronic devices, and propose possible improvements and future development directions.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Review of n-type doping diamond: methods, elements, and properties

  • 期刊论文

  • 发表日期：

    2025年8月30日

查看全文
  • Mingke Li,
  • Dayang Yu,
  • Shengnan Shen,
  • Xin Liu

摘要

Doping diamond exhibits excellent photoelectric properties, making it promising for applications in wide-bandgap semiconductors, high-temperature devices, and high-power electronics. However, research on n-type doping remains limited. This paper reviews the main n-type doping methods for diamond: ion implantation (I/I), chemical vapor deposition (CVD), high pressure–high temperature (HPHT), deuterated method (DM), surface charge transfer doping (SCTD), and laser irradiation (LI). It analyzes the parameters, advantages, and disadvantages of each technique while classifying common single-element and multi-element co-doping methods. Single-element dopants include Group IA (Li, Na, K), Group ⅡA (Be, Mg), Group VA (N, P, As, Sb), and Group ⅥA (O, S, Se, Te) elements. Multi-element co-doping often combines B-P, B-S, B-O, and B-N pairs. Additionally, we examine the atomic structures of these dopants, introduce commonly used simulation models, and compare the electronic characteristics of synthesized n-type doping diamonds. Finally, we summarize the challenges of n-type doping diamond in doping equipment, processes, and electronic devices, and propose possible improvements and future development directions.