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<p>This study focuses on the synthesis of Cu<sub>2</sub>ZnSnS<sub>4</sub> (CZTS) thin films, a promising material for photovoltaic absorbers, using the sol–gel method combined with dip-coating technique, and optimized through a Taguchi design of experiments. Six factors were investigated (annealing temperature and time, dip-coating speed, solvent type, Cu/(Zn +Sn) ratio, sulfur-to-metal ratio), each at three levels, according to a L<sub>27</sub> orthogonal array. Analysis of the results, based on the signal-to-noise (S/N) ratio and analysis of variance (ANOVA), highlighted the predominant influence of annealing time, followed by annealing temperature and dip-coating speed, on the optical band gap energy (E<sub>g</sub>). The optimal configuration (A3B3C1D1E3F1) yielded a band gap of 1.5&#xa0;eV, which is ideal for thin-film solar cell applications. Structural (XRD, Raman), morphological (SEM), optical (UV–Vis, Tauc), electrical (four-point probe), and chemical (EDS) characterizations confirmed the formation of a pure CZTS phase, free from secondary phases, with good crystallinity, high absorption (α &gt; 10<sup>4</sup>&#xa0;cm<sup>−1</sup>), and suitable conductivity (σ ≈ 13.61&#xa0;S/cm). These results demonstrate the relevance of the adopted approach for the fabrication of high-performance CZTS thin films, compatible with the requirements of photovoltaic devices. By this method, the optical band gap was adjusted to the optimal 1.5&#xa0;eV, ensuring better light absorption.</p>

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Optimization of quaternary compound kesterite Cu2ZnSnS4 (CZTS) optical band gap using dip-coating for photovoltaic absorbers

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年9月30日

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  • Marius Armand Amou,
  • Bouchaib Hartiti,
  • Ahmed Ziti,
  • Fransisco Kouadio Konan,
  • Abdelkrim Batan,
  • Youssef Doubi,
  • Ahmed Kotbi,
  • Hervé Joël Tchognia Nkuissi,
  • Hicham Labrim,
  • Laazizi Abdellah,
  • Boko Aka,
  • Philippe Thevenin

摘要

This study focuses on the synthesis of Cu2ZnSnS4 (CZTS) thin films, a promising material for photovoltaic absorbers, using the sol–gel method combined with dip-coating technique, and optimized through a Taguchi design of experiments. Six factors were investigated (annealing temperature and time, dip-coating speed, solvent type, Cu/(Zn +Sn) ratio, sulfur-to-metal ratio), each at three levels, according to a L27 orthogonal array. Analysis of the results, based on the signal-to-noise (S/N) ratio and analysis of variance (ANOVA), highlighted the predominant influence of annealing time, followed by annealing temperature and dip-coating speed, on the optical band gap energy (Eg). The optimal configuration (A3B3C1D1E3F1) yielded a band gap of 1.5 eV, which is ideal for thin-film solar cell applications. Structural (XRD, Raman), morphological (SEM), optical (UV–Vis, Tauc), electrical (four-point probe), and chemical (EDS) characterizations confirmed the formation of a pure CZTS phase, free from secondary phases, with good crystallinity, high absorption (α > 104 cm−1), and suitable conductivity (σ ≈ 13.61 S/cm). These results demonstrate the relevance of the adopted approach for the fabrication of high-performance CZTS thin films, compatible with the requirements of photovoltaic devices. By this method, the optical band gap was adjusted to the optimal 1.5 eV, ensuring better light absorption.