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<p>A number of two-dimensional (2D) materials have been explored for various applications, from electronic transistors to energy generation and storage. In this work, we explored the possibility of using reduced graphene oxide (rGO) in emerging two terminal memory devices using a printing technique. The fabricated memory devices were analysed using scanning electron microscopy, Raman spectroscopy, optical microscopy, and in-depth electrical measurements. We experimentally demonstrated that rGO memory devices fabricated via inkjet printing exhibit bipolar switching without the required electroforming step, with an on/off ratio of 3 orders of magnitude. The inkjet-printed approach allows for the layering of memory devices on each other, leading to an increase in information storage density.</p>

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Inkjet-printed graphene oxide memory cells on paper for flexible electronics

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年2月21日

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  • Iulia Salaoru,
  • Myles Worsley,
  • George Fern,
  • Shashi Paul

摘要

A number of two-dimensional (2D) materials have been explored for various applications, from electronic transistors to energy generation and storage. In this work, we explored the possibility of using reduced graphene oxide (rGO) in emerging two terminal memory devices using a printing technique. The fabricated memory devices were analysed using scanning electron microscopy, Raman spectroscopy, optical microscopy, and in-depth electrical measurements. We experimentally demonstrated that rGO memory devices fabricated via inkjet printing exhibit bipolar switching without the required electroforming step, with an on/off ratio of 3 orders of magnitude. The inkjet-printed approach allows for the layering of memory devices on each other, leading to an increase in information storage density.