A temperature dependent analytical model & performance evaluation of triple-material dielectric-pocket gate-all-around MOSFET

In current article, an analytical model of a Triple-Material Dielectric-Pocket Gate-All-Around (TM-DP-GAA) MOSFET has been presented for elevated temperature conditions. The numerical model of surface potential has been developed for temperatures ranging from 300 to 700 K. The influence of temperature on the drain current, threshold voltage and subthreshold swing has been investigated. The performance of GAA MOSFET and TM-DP-GAA MOSFET has been compared for 30 nm channel length. The TM-DP-GAA MOSFET exhibits lower subthreshold swing, higher transconductance, high drain current and reduced leakage current in comparison to the other semiconductor devices. It has also been noticed that with increasing temperature, the variation in subthreshold current and subthreshold swing is minimal. The subthreshold swing improves by 12.42% over the DPGAA MOSFET. The dielectric pocket-based MOSFET is more resistant to temperature variation.The device simulation is performed using Silvaco TCAD.