Purpose <p>This study aims to formulate a theoretical model describing the dynamic response of a photo-thermoelastic semiconductor medium with moisture diffusion under laser pulse excitation. The model incorporates two fractional-order thermal relaxation times to capture memory-dependent and anomalous heat transport relevant to ultrafast semiconductor processes.</p> Design/Methodology/Approach <p>A coupled system for temperature, carrier density, moisture concentration, and elastic fields is developed using dual-fractional heat conduction. Caputo derivatives describe the two relaxation orders, and the governing equations are solved analytically through Laplace and Fourier transforms. Numerical inversion is then employed to obtain the transient spatial–temporal field distributions.</p> Findings <p>The dual-fractional relaxation parameters strongly affect thermal, carrier, moisture, and stress responses. Higher fractional orders lead to smoother field profiles, delayed and better-damped thermoelastic waves, and reduced thermal overshoot compared with classical and single-relaxation models. Laser excitation produces pronounced near-surface variations, enhancing carrier-induced and thermoelastic effects while modifying moisture redistribution.</p> Originality/Value <p>This work provides the first analytical photo-thermoelastic–diffusion semiconductor model incorporating two fractional thermal relaxation times, offering a more realistic representation of multiscale memory effects in pulsed laser environments. The framework advances the understanding of laser-driven coupled processes in semiconductor materials and supports improved modeling for optoelectronic and photothermal device applications.</p>