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<p>This study proposes an Ag nanoelectrode array (Ag-NEA) based resistive random-access memory (RRAM) to overcome the inherent stochastic nature of conductive filament formation. Fabricated via ArF dry photolithography, the Ag-NEA RRAM demonstrates significantly improved switching uniformity (both cycle-to-cycle and device-to-device) and reduced operating voltages compared to conventional Ag film-based devices. These enhancements are attributed to the localized Ag cation supply and enhanced diffusivity through the NEA structure, enabling more controlled filament formation. Time-of-flight secondary ion mass spectrometry (TOF-SIMS) depth profiling confirms that the Ag-NEA structure promotes effective Ag diffusion in nanoparticle form, validating the improved switching mechanism.</p>

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Silver Nano Electrode Array for Controlling Conductive Filament Formation in RRAM

  • 期刊论文

  • 发表日期：

    2026年5月22日

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  • Jun-ho Byun,
  • Woon-San Ko,
  • Jung-Chul Song,
  • Sung-Jin Chang,
  • Ga-Won Lee

摘要

This study proposes an Ag nanoelectrode array (Ag-NEA) based resistive random-access memory (RRAM) to overcome the inherent stochastic nature of conductive filament formation. Fabricated via ArF dry photolithography, the Ag-NEA RRAM demonstrates significantly improved switching uniformity (both cycle-to-cycle and device-to-device) and reduced operating voltages compared to conventional Ag film-based devices. These enhancements are attributed to the localized Ag cation supply and enhanced diffusivity through the NEA structure, enabling more controlled filament formation. Time-of-flight secondary ion mass spectrometry (TOF-SIMS) depth profiling confirms that the Ag-NEA structure promotes effective Ag diffusion in nanoparticle form, validating the improved switching mechanism.