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<p>Next generation complementary circuits remain limited by the absence of <i>p</i>-type thin-film transistors (TFTs) that can match the performance and reliability of mature <i>n</i>-type devices. Moreover, extensive research has focused on wafer-scale uniformity and low-temperature processing of emerging semiconductors for large-area, back end of line-compatible manufacturing. This review surveys recent efforts on emerging <i>p</i>-type semiconductors to meet these demands across three platforms: conventional <i>p</i>-type oxides, metal halides, and tellurium (Te)-based semiconductors, highlighting device level metrics, defect control strategies, and low-temperature processing. Recent studies on novel semiconductors such as metal halides and Te alloys report fast, stable switching with cost efficient, low-temperature fabrication while also suppressing off state leakage and improving stability. Remaining challenges include thermal budgets and uniformity for oxides, chemical robustness for halides, and leakage in elemental Te. We outline emerging materials and processes that address these limitations and bring reliable, high-performance complementary circuits and monolithic three-dimensional integration a step closer to commercialization.</p>

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Recent Progress of p-Type Semiconductors for Thin-Film Transistors: Metal Oxide, Metal Halide, and Tellurium

  • 期刊论文

  • 发表日期：

    2025年11月4日

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  • Yeong-Min Seon,
  • Minki Son,
  • Siyeon Choi,
  • Hanlim Kang,
  • Myung-Gil Kim

摘要

Next generation complementary circuits remain limited by the absence of p-type thin-film transistors (TFTs) that can match the performance and reliability of mature n-type devices. Moreover, extensive research has focused on wafer-scale uniformity and low-temperature processing of emerging semiconductors for large-area, back end of line-compatible manufacturing. This review surveys recent efforts on emerging p-type semiconductors to meet these demands across three platforms: conventional p-type oxides, metal halides, and tellurium (Te)-based semiconductors, highlighting device level metrics, defect control strategies, and low-temperature processing. Recent studies on novel semiconductors such as metal halides and Te alloys report fast, stable switching with cost efficient, low-temperature fabrication while also suppressing off state leakage and improving stability. Remaining challenges include thermal budgets and uniformity for oxides, chemical robustness for halides, and leakage in elemental Te. We outline emerging materials and processes that address these limitations and bring reliable, high-performance complementary circuits and monolithic three-dimensional integration a step closer to commercialization.